Electronic structure of 3C inclusions in 4H SiC

Miao, Maosheng; Lambrecht, Walter R. L.

doi:10.1063/1.2732414

Cited by 23 publications

(22 citation statements)

References 31 publications

(15 reference statements)

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“…However, stresses in SiC PiN diodes are negligible and an alternative driving force must be responsible in this case. In the absence of shear stress, a plausible driving force for SF expansion is an electronic one suggested by Miao et al 12–14. This can be understood from First Principles calculations of these authors, together with density functional supercell calculations of Lindefelt et al 15, 16, who determined the energy levels of multilayer SFs in 4H‐SiC.…”

Section: Discussionmentioning

confidence: 98%

The concept of quasi‐Fermi level and expansion of faulted loops in SiC under minority carrier injection

Pirouz

2012

Physica Status Solidi (a)

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pirouz.pirouz@case.edu, Phone: þ1 216 368 6486, Fax: þ1 216 368 3209Degradation of 4H-SiC PiN diodes -a rapid increase in the forward voltage drop with operation time -has been a focus of research since it was first reported over a decade ago. It was soon discovered that associated with this degradation is a rapid increase in the number and extent of intrinsic stacking faults (SFs) in SiC. Further research showed that the expansion of SFs is due to the injection of electron-hole pairs (ehps) in the active region of the device under forward biasing. This effect indicated that recombination-induced dislocation glide -a phenomenon that was known to occur in many other semiconductors and in SiC -may play an important role in enhancing the motion of the leading partial dislocations and thus in expanding SFs in PiN diodes operated under forward bias conditions. This was later supported by enhanced nucleation and expansion of SFs by bandgap optical excitation in virginal SiC crystals itself -whether the material was of the 4H or 6H polytyperather than in forward-biased SiC diodes. At the same time, we used the concept of quasi-Fermi energy -as the transient value of the electron population during excited states of 4H-or 6H-SiC -to explain the driving force for expansion of SFs. Recently, Caldwell et al. have used this concept to develop various experimental observations that have been made on these diodes, including SF expansion under forward biasing, saturation of the maximum forward voltage drift, annealinginduced contraction of SFs so generated and consequent drift recovery of the forward voltage drop. In this paper, we expand the concept of quasi-Fermi level to get a better understanding of faulted loop expansion in 4H-SiC bipolar devices and in virgin 4H-and 6H-SiC crystals.

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Section: Discussionmentioning

confidence: 98%

The concept of quasi‐Fermi level and expansion of faulted loops in SiC under minority carrier injection

Pirouz

2012

Physica Status Solidi (a)

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“…This simplifies the computation and corresponds to the complete screening approximation of Ref. [21]. From the TMM, we compute the radiative recombination energy for different thicknesses of the 4H barrier in between the two 3C QWs.…”

Section: Model Calculation and Discussionmentioning

confidence: 99%

Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

Juillaguet

Robert

Camassel

2009

Materials Science and Engineering: B

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“…16,17 The fact that IGSFs associated with surface triangular defects ͑defect 5 in Fig. 1͒ have excitonic gaps similar to bulk 3C-SiC can be understood from recent computational studies, 15,18 which show that with increasing number of stacked 3C layers in a heteropolytype structure 4H / QW/ 4H, the SF gap approaches that of the bulk 3C-SiC polytype.…”

Section: Cathodoluminescence Study Of the Properties Of Stacking Faulmentioning

confidence: 96%

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Maximenko

Freitas

Klein

et al. 2009

Applied Physics Letters

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In-grown stacking faults in n-type 4H-SiC epitaxial layers have been investigated by real-color cathodoluminescence imaging and spectroscopy carried out at room and liquid helium temperatures. Stacking faults with 8H stacking order were observed, as well as double layer and multilayer 3C-SiC structures and a defect with an excitonic band gap at 2.635 eV. It was found that 8H stacking faults and triangular surface defects can be generated from similar nucleation sources. Time-resolved measurements reveal that compared to defect-free regions, the carrier lifetimes are severely reduced by the presence of stacking faults corresponding to triangular surface defects and three-dimensional 3C-SiC inclusions.

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Electronic structure of 3C inclusions in 4H SiC

Cited by 23 publications

References 31 publications

The concept of quasi‐Fermi level and expansion of faulted loops in SiC under minority carrier injection

The concept of quasi‐Fermi level and expansion of faulted loops in SiC under minority carrier injection

Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

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