Electronic Structure Characterization of La Incorporated Hf-Based High-&lt;I&gt;k&lt;/I&gt; Gate Dielectrics by NEXAFS

Yamamoto, Takashi; Ogawa, Singo; Kunisu, Masahiro; Tsuji, Junichi; Kita, Kiyoshi; Saeki, Masanobu; Oku, Yudai; Arimura, Hiroaki; Kitano, Naomu; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

doi:10.1166/jnn.2011.3921

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…and below because of the thermal stability, wide band gap and high dielectric constant in MOS devices. [15][16][17][18][19] But the challenges to coat conventional polysilicon gate on HfO 2 layer are needed to be solved, such as the dopant diffusion, reaction at junction with dielectric and dopant effect. Researchers employed additional metal layer such as TiN to be compatible with high-k HfO 2 layer to fabricate the promising devices.…”

Section: Introductionmentioning

confidence: 99%

Gaussian Beam Incident on the One-Dimensional Diffraction Gratings with the High-K Metal Gate Stack Structures

Kuo¹,

Frederick²

2014

j nanosci nanotechnol

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Optical scatterometry has attracted extensive interest in extracting the geometric shape information of nanolithography patterns because of the trend of shrinking device size and complicated stack structure. RCWA is the numerical algorithm implemented in the current scatterometry tool to calculate the diffraction efficiency. However, the known weakness for the RCWA method is the analysis of metallic gratings illuminated by the TM wave. This research applies the FDTD method using the Gaussian beam excitation source to analyze the diffraction efficiency of HKMG gratings for the use in the optical scatterometry and verifies the numerical diffraction efficiency discrepancy between the Gaussian beam and plane wave excitation methods. The numerical study is carried out with the line/space nanolithography patterns on the HKMG process stacks at 45 nm node technology. The nanolithography patterns are modeled as 1-D surface relief gratings. The 0th order diffraction efficiency is analyzed as a function of CDs, SWAs, incident angles and pitches of the gratings. The study presents the impact of the polarizations of the incident waves on the diffraction efficiency. In addition, this research investigates the phase of the 0th diffraction order as a function of the SWAs and illustrates the corresponding SWA parameter effect on the phase distribution. This research suggests the minimum beam radius to converge the numerical diffraction efficiency using Gaussian beam excitation to it using the plan wave.

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Section: Introductionmentioning

confidence: 99%

Gaussian Beam Incident on the One-Dimensional Diffraction Gratings with the High-K Metal Gate Stack Structures

Kuo¹,

Frederick²

2014

j nanosci nanotechnol

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“…In addition, near-edge X-ray absorption fine structure (NEXAFS) provides an insight into the local chemical structure. [14][15][16][17][18] However, conventional XPS and NEXAFS from the top side of the electrode surface have difficulty in characterizing interface reactions of the gate stack due to limitations in detection depth and troublesome sample preparation. Recently, backside analysis, which utilizes selective chemical etching for removing a Si substrate, has attracted considerable attention because it enables the evaluation of the interface reaction, as well as the chemical structure of the high-k dielectric and interfacial layer.…”

Section: Introductionmentioning

confidence: 99%

Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks

Yamamoto¹,

Ogawa²,

Arimura³

et al. 2011

Jpn. J. Appl. Phys.

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Thermally induced structural changes in TiN/Hf(La)SiO gate stacks were investigated by back-side X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS). A distinct correlation between bottom oxide growth and an increase in equivalent oxide thickness (EOT) was confirmed under high-temperature annealing at over 850 °C regardless of La content. Back-side XPS also revealed that oxygen and nitrogen diffusion occurs, forming partially oxidized TiON layers at a metal/high-k interface under moderate annealing temperatures of approximately 600 °C, and that annealing at over 750 °C leads to the reduction of the oxide phase and produces a thinner inter-layer with a clear Ti–N bond feature. Moreover, with an increase in annealing temperature, a change in the local atomic configuration in the HfLaSiO dielectric layer was identified from oxygen K-edge spectra. This structural change induced by thermal reaction can be considered as a possible cause of the V th instability of La-incorporated high-k gate stacks. On the basis of these findings on structural changes, the physical origins of the effective work function modulation of the gate stacks are discussed in detail.

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Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

Caraveo-Frescas

Wang

Schwingenschlögl

et al. 2012

Applied Physics Letters

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The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

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Electronic Structure Characterization of La Incorporated Hf-Based High-<I>k</I> Gate Dielectrics by NEXAFS

Cited by 5 publications

References 13 publications

Gaussian Beam Incident on the One-Dimensional Diffraction Gratings with the High-K Metal Gate Stack Structures

Gaussian Beam Incident on the One-Dimensional Diffraction Gratings with the High-K Metal Gate Stack Structures

Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks

Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

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