Electronic structure and topological phases of the magnetic layered materials 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Te</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:mo>,</mml:mo><mml:mo> </mml:mo><mml:msub><mml:mi mathvariant="normal">MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Se</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math>
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Li, Ping; Yu, Jiangying; Wang, Ying; Luo, Weidong

doi:10.1103/physrevb.103.155118

Cited by 24 publications

(8 citation statements)

References 33 publications

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“…QAH effect has been observed in its five septuple-layer film [9], which has a theoretical energy gap of 38 [32] or 33 meV [36], larger than the values listed in table 1. Topologically nontrivial phases have also been predicted in MnSb 2 Te 4 and MnBi 2 Se 4 [36,37]. However, firstprinciples calculations have suggested that they are not ideal QAH systems [36].…”

Section: Resultsmentioning

confidence: 69%

“…First, an intrinsic AFM TI MnBi 2 Te 4 has recently attracted much attention [9,[31][32][33][34][35]. QAH effect has been observed in its five septuple-layer film [9], which has a theoretical energy gap of 38 [32] or 33 meV [36], larger than the values listed in table 1. Topologically nontrivial phases have also been predicted in MnSb 2 Te 4 and MnBi 2 Se 4 [36,37].…”

Section: Resultsmentioning

confidence: 99%

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Quantum anomalous Hall effect in Cr₂Ge₂Te₆/Bi₂Se₃/Cr₂Ge₂Te₆ heterostructures

You

Huang

et al. 2021

J. Phys.: Condens. Matter

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Currently, quantum anomalous Hall (QAH) effect can only be observed at very low temperatures, which severely hinders its utilization from spintronics to quantum computation. Finding or predicting new systems supporting QAH effect at high temperatures remains essential and challenging. This work presents first-principles studies on the proximity effect between Bi 2 Se 3 slabs and Cr 2 Ge 2 Te 6 (CGT) layers, reporting that Chern insulators are available in CGT/Bi 2 Se 3 /CGT heterostructures. If the sandwiched Bi 2 Se 3 slab is 4 quintuple layers (QLs) or thicker, the Chern insulating state is robust against the interfacial stacking manner. If the Bi 2 Se 3 slab is only 2 or 3 QLs, the CrBi-and CrH-aligned heterostructures are also Chern insulators, while the CrSe-aligned ones are trivial. The Chern insulators support the Hall conductivity σ xy = e 2 /h and have energy gaps ranging from 3 to 20 meV, implying QAH effect at higher temperatures. An effective model Hamiltonian is introduced to understand the topological phase of the heterostructures.

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Section: Resultsmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 99%

Quantum anomalous Hall effect in Cr₂Ge₂Te₆/Bi₂Se₃/Cr₂Ge₂Te₆ heterostructures

You

Huang

et al. 2021

J. Phys.: Condens. Matter

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“…The latter may suffer from interfacial band bending. [27,28] Therefore, the acquired systems are usually not satisfactory.…”

Section: Introductionmentioning

confidence: 99%

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN₂CSCl MXene

Lv¹,

Wang²,

Zhang³

2022

Chinese Phys. B

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Quantum anomalous Hall effect (QAHE) is an innovative topological spintronic phenomenon with dissipationless chiral edge states and attracts rapidly increasing attention. However, it has only been observed in few materials in experiments. Here, according to first-principles calculations, we report that the MXene MoYN2CSCl shows a topologically nontrivial band gap of 37.3 meV, possessing QAHE with a Chern number of C = 1, which is induced by band inversion between d xz and d yz orbitals. Also, the topological phase transition for MoYN2CSCl can be realized via strain or by turning the magnetization direction. Remarkably, MoYN2CSCl shows the nodal-line semimetal state dependent on the electron correlation U. Our findings add an experimentally accessible and tunable member to QAHE family, which stands a chance of enriching the applications in spintronics.

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“…Based on this mechanism, a giant |N| was predicted in the monolayer model of a ferromagnetic semiconductor. 9) Recently, it has been predicted that van der Waals MnBi 2 Te 4 having an odd (⩾3) number of septuple layers (SLs) is a ferrimagnetic semiconductor with a large S 0 and nonzero σ xy , [10][11][12] and quantized σ xy has been experimentally observed at 5SLs. 13) Thus, a large |N| originating from |θ H S 0 | can be obtained.…”

mentioning

confidence: 99%

“…Considering the localization of 3d orbitals in Mn, the Hubbard U method was applied, and we used U = 4.0 eV based on a previous study. 12) Normconserving pseudopotentials and wave functions expanded by the linear combination of the pseudoatomic orbitals were used. Spin-orbit coupling was considered through the fully relativistic total-angular-momentum-dependent pseudopotentials.…”

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confidence: 99%

Seebeck-induced anomalous Nernst effect in van der Waals MnBi₂Te₄ layers

Morishima

Yamaguchi

Sawahata

et al. 2023

Appl. Phys. Express

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Magnetic semiconductors with an anomalous Hall conductivity σxy ≠ 0 near the Fermi energy are expected to have a large anomalous Nernst coefficient N owing to the Seebeck term, which is the product of the Hall angle ratio and Seebeck coefficient. In this study, we examined the typical cases of |N| ≧ 20 μV/K in the ferrimagnetic semiconductor MnBi2Te4 using first-principles calculations. A large enhancement in |N| was obtained by the Seebeck term for a wide range of carrier concentrations. The present results motivate further studies on the anomalous Nernst effect in intrinsically or doped magnetic semiconductors.

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Electronic structure and topological phases of the magnetic layered materials MnBi2Te4, MnBi2Se4 , and

Cited by 24 publications

References 33 publications

Quantum anomalous Hall effect in Cr₂Ge₂Te₆/Bi₂Se₃/Cr₂Ge₂Te₆ heterostructures

Quantum anomalous Hall effect in Cr₂Ge₂Te₆/Bi₂Se₃/Cr₂Ge₂Te₆ heterostructures

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN₂CSCl MXene

Seebeck-induced anomalous Nernst effect in van der Waals MnBi₂Te₄ layers

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Electronic structure and topological phases of the magnetic layered materials MnBi2Te4, MnBi2Se4 , and

Cited by 24 publications

References 33 publications

Quantum anomalous Hall effect in Cr2Ge2Te6/Bi2Se3/Cr2Ge2Te6 heterostructures

Quantum anomalous Hall effect in Cr2Ge2Te6/Bi2Se3/Cr2Ge2Te6 heterostructures

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN2CSCl MXene

Seebeck-induced anomalous Nernst effect in van der Waals MnBi2Te4 layers

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Product

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Quantum anomalous Hall effect in Cr₂Ge₂Te₆/Bi₂Se₃/Cr₂Ge₂Te₆ heterostructures

Quantum anomalous Hall effect in Cr₂Ge₂Te₆/Bi₂Se₃/Cr₂Ge₂Te₆ heterostructures

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN₂CSCl MXene

Seebeck-induced anomalous Nernst effect in van der Waals MnBi₂Te₄ layers