Electronic structure and photoinduced effect of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>LaMnO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>film

Murakami, Kazuhiro; Yamauchi, Toshihiko; Nakamura, Arao; Moritomo, Yutaka; Tanaka, Hidekazu; Kawai, Tomoji

doi:10.1103/physrevb.73.180403

Cited by 7 publications

(7 citation statements)

References 31 publications

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“…Considering that t is in the range 0.5-1 eV, λ=1.25 is more consistent with the experimental estimations of the gap (1.6 eV in Ref. 45…”

Section: Resultssupporting

confidence: 90%

“…Considering that t is in the range 0.5-1 eV, = 1.25 is more consistent with the experimental estimations of the gap ͑1.6 eV in Ref. 45 When the density of states is projected over sites further than Ϸ4 unit cells from the domain wall, we recover essentially the bulk density of states. However, a projection over Mn sites close to the domain wall is more interesting.…”

Section: Resultssupporting

confidence: 70%

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Conducting Jahn-Teller domain walls in undoped manganites

Salafranca

Dagotto

2010

Phys. Rev. B

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We investigate the electronic properties of multidomain configurations in models for undoped manganites by means of variational and Monte Carlo techniques. These materials display simultaneous Jahn-Teller distortions and magnetic ordering. We find that a band of electronic states appears associated with Jahn-Teller domain walls, and this band is localized in the direction perpendicular to the walls. The energy and width of this band depend on the conformational properties of the domain walls. At finite temperatures, the conductance along the domain walls, induced by the localized domain-wall bands, is orders magnitude larger than in the bulk.

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“…Considering that t is in the range 0.5-1 eV, λ=1.25 is more consistent with the experimental estimations of the gap (1.6 eV in Ref. 45…”

Section: Resultssupporting

confidence: 90%

Section: Resultssupporting

confidence: 70%

Conducting Jahn-Teller domain walls in undoped manganites

Salafranca

Dagotto

2010

Phys. Rev. B

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“…1(a) and 1(e) display respectively the band structures for t SO = 0.55 and 0.20 eV, where even and odd parities of wavefunctions at the time-reversal invariant momenta (Γ and M points) are labelled as "+/−". As a comparison, one can see that the parities of conduction and valence bands exchange at Γ point, indicating a topological phase transition from Z 2 topological insulator to topologically trivial band insulator [29], which is in consistent with previous works [30,31]. The presence of magnetization breaks the time-reversal symmetry and thus the Z 2 topological phase.…”

supporting

confidence: 89%

In-plane magnetization-induced quantum anomalous Hall effect in atomic crystals of group-V elements

et al. 2017

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We theoretically demonstrate that the in-plane magnetization induced quantum anomalous Hall effect (QAHE) can be realized in atomic crystal layers of group-V elements with buckled honeycomb lattice. We first construct a general tight-binding Hamiltonian with sp 3 orbitals via Slater-Koster two-center approximation, and then numerically show that for weak and strong spin-orbit couplings the systems harbor QAHEs with Chern numbers of C = ±1 and ±2 , respectively. For the C = ±1 phases, we find the critical phase-transition magnetization from a trivial insulator to QAHE can become extremely small by tuning the spin-orbit coupling strength. Although the resulting band gap is small, it can be remarkably enhanced by orders via tilting the magnetization slightly away from the in-plane orientation. For the C = ±2 phases, we find that the band gap is large enough for the room-temperature observation. Although the critical magnetization is relatively large, it can be effectively decreased by applying a strain. All these suggest that it is experimentally feasible to realize high-temperature QAHE from in-plane magnetization in atomic crystal layers of group-V elements.

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“…We noted that the absorption coefficients of the bulk LaMnO 3 are ϳ0.85ϫ 10 5 cm −1 and ϳ1.1ϫ 10 5 cm −1 for the wavelength of 532 nm and 660 nm, respectively. 24 Considering the difference between LBMO ͑LCMO͒ and LaMnO 3 , the deduced ␣ Ϸ 2.4ϫ 10 5 cm −1 is plausible.…”

Section: ͑5͒mentioning

confidence: 96%

Influence of film thickness on the physical properties of manganite heterojunctions

Gao

Sun

Wang

et al. 2011

Journal of Applied Physics

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Rectifying and photoelectronic properties of the La0.67Ba0.33MnO3/SrTiO3:Nb junctions with the film thickness from d=0.5 to 30 nm have been systematically studied. It is found that the electronic transport of the junction is dominated by quantum tunneling or thermoionic emission when film thickness is below or above 1 nm. The rectifying ratio and ideality factor, correspondingly, experience a sudden change as film thickness grows from 0.5 to 1 nm and a smooth variation with film thickness above 1 nm. The threshold film thickness for the establishment of a mature depletion layer is therefore 1 nm. The photoemission properties of the junctions also exhibit a strong dependence on film thickness. As experimentally shown, the photocurrent vanishes in the zero thickness limit, and grows rapidly with the increase in film thickness until d=6 nm, where a maximal photocurrent of ∼770 nA/mm2 under the irradiance of the laser of 5 mW and 532 nm is obtained. After this maximum, an increase-to-decrease turning appears with further increasing film thickness. Taking into account the finite diffusion distance of the photocarriers and the strain-enhanced charge trapping in ultrathin film junctions, a theoretical description that well reproduces the experiment results can be obtained, which reveals the severe depression of finite diffusion distance of the extra carriers on photocurrent. The maximal diffusion distance thus obtained is ∼3.5 nm. Similar analyses have been performed for the La0.67Ca0.33MnO3/SrTiO3:Nb junctions, and the corresponding diffusion distance there is ∼1.5 nm.

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Electronic structure and photoinduced effect ofLaMnO3film

Cited by 7 publications

References 31 publications

Conducting Jahn-Teller domain walls in undoped manganites

Conducting Jahn-Teller domain walls in undoped manganites

In-plane magnetization-induced quantum anomalous Hall effect in atomic crystals of group-V elements

Influence of film thickness on the physical properties of manganite heterojunctions

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