Conducting Jahn-Teller domain walls in undoped manganites

Salafranca, Juan; Yu, Rong; Dagotto, Elbio

doi:10.1103/physrevb.81.245122

Cited by 20 publications

(15 citation statements)

References 45 publications

(62 reference statements)

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“…The electronic state(s) within the band gap observed here is in line with localized states suggested in sharp phase kinks of order parameters in charge or spin ordered insulators 2,6,33,34 . Our STM and STS results disclose that the domain wall is not a metallic channel developed by the suppression of the CDW order, which have been assumed by many previous studies 8,15,17,24 .On the other hand, a few other studies suggested that free carriers from domain wall electronic states screen the electron correlation in neighboring CDW domains 21 .…”

Section: Discussionsupporting

confidence: 85%

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

et al. 2017

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Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave insulator 1T-TaS2 using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of domain walls and edges of domains. Theoretical calculations reveal their atomistic origin as the local reconstruction of domain walls under the strong influence of electron correlation. Our results introduce a concept for the domain wall electronic property, the walls own internal degrees of freedom, which is potentially related to the controllability of domain wall electronic properties.

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Section: Discussionsupporting

confidence: 85%

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

et al. 2017

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“…The strength of the coupling between the ferroelectric and antiferromagnetic walls in BiFeO 3 is an issue that still needs to be resolved from both a theoretical and an experimental perspective. The role of the dimensionality on electrical and magnetoelectrical transport needs to be elucidated and compared to known systems, such as manganites (Dagotto, 2003;Salafranca, Yu, and Dagotto, 2010). We note that the interaction between ferroelectric and antiferromagnetic domain walls has been studied in model multiferroics such as YMnO 3 (Goltsev et al, 2003) and BiFeO 3 (Gareeva and Zvezdin, 2011).…”

Section: Magnetism and Magnetoelectric Properties Of Multiferroic Dommentioning

confidence: 99%

“…The domain walls of metallic ferromagnets were found to be more resistive than the domains due to spin scattering (Viret et al, 2000;Danneau et al, 2002). On the other hand, the domain walls of manganites (which are ferromagnetic and ferroelastic) have been predicted to be more conducting than the domains, due to strain coupling: The Jahn Teller distortion is smaller and the octahedral rotation angle is straighter inside the domain wall than outside (Salafranca, Yu, and Dagotto, 2010), leading to increased orbital overlap and thus bigger bandwidth. The same interplay between octahedral rotation straightening and increased conductivity has been postulated for the domain walls of bismuth ferrite , and the straightening of the octahedral rotation angle inside the walls of this material has been confirmed by electron microscopy (Borisevich et al, 2010).…”

Section: F Domain Wall Conductivitymentioning

confidence: 99%

Domain wall nanoelectronics

et al. 2012

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Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

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“…The metallic DWs result from mid-gap states that are extended within the DW plane but are localized perpendicular to it. Such "defect states" are generally present, theoretically, if the magnetically-disordered state is metallic, and the disturbance to the order parameter is sharp (2)(3)(4)(5)(6)28). Indeed metallic DWs are not observed in other Ln2Ir2O7 (Ln = Sm, Eu, etc.)…”

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confidence: 99%

Mobile metallic domain walls in an all-in-all-out magnetic insulator

Yue

Cui

Ueda

et al. 2015

Science

179

126

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Visualizing conducting domain walls When a metal undergoes a phase transition and becomes insulating, it sometimes also becomes magnetically ordered. It is possible that some metallicity survives along the boundaries of magnetic domains, the so-called domain walls, but the question is difficult to address directly in experiments. Ma et al. did just that by mapping out the conductance of the material Nd 2 Ir 2 O 7 in its low-temperature magnetic insulating phase, using microwave impedance microscopy. The magnetic domain walls showed up clearly in the images as regions of high conductance. Science , this issue p. 538

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Conducting Jahn-Teller domain walls in undoped manganites

Cited by 20 publications

References 45 publications

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

Domain wall nanoelectronics

Mobile metallic domain walls in an all-in-all-out magnetic insulator

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