Electronic structure and magneto-optics of self-assembled quantum dots

Wójs, Arkadiusz; Hawrylak, Paweł; Fafard, S.; Jacak, Lucjan

doi:10.1103/physrevb.54.5604

Cited by 337 publications

(215 citation statements)

References 17 publications

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“…In the zeroth-order approximation, however, the off-diagonal components of H Γ8 can be neglected at all, thereby, heavy-and light-hole states are completely separated in this approximation, so that the four-component hole wavefunctionΨ has only one non-zero component Ψ n m with m = −3/2 either 3/2 for n = hh and m = −1/2 either 1/2 for n = lh. 45 Due to the assumed separable potential (5) the envelopes Ψ n m (r) can be sought in separable form 46,47 …”

Section: Quantization Of the Hole Motion In The Pyramidal Quantum Dotmentioning

confidence: 99%

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Durnev¹,

Glazov²,

Ivchenko³

et al. 2013

Phys. Rev. B

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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states ±3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.

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Section: Quantization Of the Hole Motion In The Pyramidal Quantum Dotmentioning

confidence: 99%

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Durnev¹,

Glazov²,

Ivchenko³

et al. 2013

Phys. Rev. B

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“…37͒ to strongly confined ͑self-assembled͒. 38,39 In the vertical direction, the potential V͑z͒ is defined by a rectangular quantum well provided by the band offset between the QD and barrier materials. The quantum well eigenstates are derived numerically.…”

Section: Theorymentioning

confidence: 99%

Photoluminescence spectroscopy of trions in quantum dots: A theoretical description

Climente

Bertoni²,

Goldoni

2008

Phys. Rev. B

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We present a full configuration-interaction study of the spontaneous recombination of neutral and singly charged excitons ͑trions͒ in semiconductor quantum dots from weak-to strong-coupling regimes. We find that the enhancement of the recombination rate of neutral excitons with increasing dot size is suppressed for negative trions and even reversed for positive trions. Our findings agree with recent comprehensive photoluminescence experiments in self-assembled quantum dots ͓P. Dalgarno et al., Phys. Rev. B 77, 245311 ͑2008͔͒ and confirm the major role played by correlations in the valence band. The effect of the temperature on the photoluminescence spectrum and that of the ratio between the electron and hole wave-function length scales are also described.

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“…Differences in the predicted values for quantum dot ground state and excited state emission, and in intersublevel energies will be obtained depending on what shapes and aspect ratios are assumed in the calculation. Calculations for both pyramid-shaped 25,26 and lens-shaped In x Ga 1Ϫx As/GaAs quantum dots 27 have been reported; however, an exact experimental determination of the shape of these islands is at present controversial. AFM has been the most commonly used technique for the shape and size study of uncapped quantum dots.…”

mentioning

confidence: 99%

Transmission electron microscopy study ofInxGa1−xAsquantum dots on a GaAs(00

et al. 1999

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A transmission electron microscopy ͑TEM͒ investigation of the morphology of In x Ga 1Ϫx As quantum dots grown on a GaAs͑001͒ substrate has been carried out. The size and the shape of the quantum dots have been determined using bright-field images of cross-section TEM specimens and ͓001͔ on-zone bright-field images with imaging simulation from plan-view TEM specimens. The results suggest that the coherent quantum dots are lens shaped with base diameters of 25-40 nm and aspect ratios of height to diameter of 1:6 -1:4. ͓S0163-1829͑99͒00920-0͔Since Esaki and Tsu 1 proposed the idea of semiconductor heterostructures and successfully grew Al x Ga 1Ϫx As/GaAs superlattices nearly three decades ago, quantum semiconductor structures have received increasing attention due to their potential applications in electronic and optoelectronic devices and circuits. 2,3 In recent years, fabrication of lowdimensional quantum semiconductor structures, such as quantum wires and quantum dots, has become possible with the development of modern epitaxial techniques. Compared with bulk or quantum well systems, these low-dimensional quantum semiconductor structures have unique and superior optical properties for optoelectronic devices. For quantum dots, carriers are confined three dimensionally, leading to different optoelectronic properties from those in bulk materials, quantum wells, and quantum wires. Since the shape and size of quantum dots are critical parameters in determining their optoelectronic properties, 4-7 determination of these parameters is important. Several techniques have been used to estimate these parameters, such as atomic force microscopy ͑AFM͒, 8-14 scanning tunneling microscopy, 15-17 reflection high-energy electron diffraction, 18,19 and transmission electron microscopy ͑TEM͒. 20-24 Different shapes of quantum dots such as lens-shaped, 9,10,23 cone-shaped, 14,17 pyramids with different facets, 11,12,[18][19][20][21] and truncated pyramids 22 have been reported using the above techniques. Differences in the predicted values for quantum dot ground state and excited state emission, and in intersublevel energies will be obtained depending on what shapes and aspect ratios are assumed in the calculation. Calculations for both pyramid-shaped 25,26 and lens-shaped In x Ga 1Ϫx As/GaAs quantum dots 27 have been reported; however, an exact experimental determination of the shape of these islands is at present controversial. AFM has been the most commonly used technique for the shape and size study of uncapped quantum dots. However, the convolution of the AFM tip with the dot structure limits its ability to resolve the shape of very small quantum dots, 28,29 and especially of the dots with facets. Although TEM techniques have been used to study the shape and size of the dots, reliable information has not been obtained. In this study, a comprehensive TEM investigation of the shape and the size of uncapped In x Ga 1Ϫx As quantum dots grown on GaAs͑001͒ is carried out.The In 0.6 Ga 0.4 As quantum dots were grown on a GaAs͑001͒ ...

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Electronic structure and magneto-optics of self-assembled quantum dots

Cited by 337 publications

References 17 publications

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Photoluminescence spectroscopy of trions in quantum dots: A theoretical description

Transmission electron microscopy study ofInxGa1−xAsquantum dots on a GaAs(00

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