Electronic Structure and Magnetic Properties of V-Monodoped and (V, Al)-Codoped 4H-SiC

Lin, Long; Li, Xianhong; Xu, Yonghao; Zhang, Zhihua; Tao, Hualong; He, Ming; Zhang, Zhanying; Cao, Jianliang

doi:10.1007/s10948-017-4175-5

Cited by 8 publications

(1 citation statement)

References 22 publications

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“…Vanadium (V) was a bipolar impurity, functioning both as a pseudo-acceptor (−/0) and a pseudo-donor (0/+), which can serve as the main dopant and acted as a compensating center in semiinsulating 4H-SiC [138,139]. Besides, V can compensate for the residual acceptor B atoms and donor N atom, thereby creating semi-insulating 4H-SiC crystals with resistivity exceeded 10 15 Ω•cm [137,140,141]. For V doped 4H-SiC, the acceptor level was located at E C −0.81/0.97 eV, while the donor energy levels of V were situated at E v + (1.3-1.5) eV [139].…”

Section: Vanadium Dopingmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

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Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are ﬁnally outlined.

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