Electronic stopping power of polymers for heavy ions in the ion energy domain of LSS theory

Neetu, .; Pratibha,; Sharma, Vishal; Diwan, P.K.; Kumar, S.

doi:10.1016/j.radmeas.2009.03.031

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Simulation Of Implanted Profile1

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Cited by 13 publications

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“…where S is the sputtering yield (atom ion -1 ), R p and σ are the projected range and projected range straggling (projected standard deviation), respectively. The values of R p and σ can be calculated according to the LSS theory [6][7][8] using the material constants given in Refs. [9] and [10].…”

Section: Simulation Of Implanted Profilementioning

confidence: 99%

Quantification of the N2+ Implanted AES Depth Profiles in Cobalt Films

Liu

Wang

Hofmann³

et al. 2012

AMR

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The nitrogen implanted profiles in cobalt films that are generated by N2+ bombardment with three energies of 0.5, 2.0 and 5.0 keV are simulated by the analytical Schulz-Wittmaack expression and the SRIM program, respectively. Taking the both simulated profiles as concentration-depth profiles, the corresponding measured AES depth profiling data of implanted nitrogen are perfectly fitted by the Mixing-Roughness-Information depth (MRI) model.

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Section: Simulation Of Implanted Profilementioning

confidence: 99%