Control of polysilicon nanowires conductivity by angle-dependent ion implantation

Aziza, Shahar; Ripp, Alex; Horvitz, Dror; Rosenwaks, Y.

doi:10.1016/j.mssp.2017.11.001

Cited by 4 publications

(2 citation statements)

References 17 publications

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“…Further, doping of the SiNWs is challenging considering the nanowire structure. Ion implantation is one of the prominent doping techniques for at Si surfaces; however, the method fails for SiNW due to doping nonuniformity caused by the ions aggregation at the SiNW bottom [21]. Molecular beam epitaxy and CVD are expensive and require hazardous precursors [22].…”

Section: Introductionmentioning

confidence: 99%

Enhancing Si-Nanowire Solar Cell Performance through Fabrication and Annealing Optimization

Muduli,

Kale

2024

Preprint

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The notable optical and electrical features of Si nanowires (SiNWs) outperform conventional bulk silicon, including a large surface area, antireflective properties, and shorter carrier transportation paths for photovoltaics. However, the key challenge lies in the fabrication and doping of SiNWs for p-n junction. The cost-effective metal-assisted chemical etching (MACE) lets the electrolyte etch the rear surface of the substrate. The dot electrode pattern on the front side and the close-periphery electrode on the rear side reduce the photocurrent collection. The spin-on-doping (SOD) leaves phosphorus clusters on the surface during diffusion, which needs dissolution and activation for doping uniformity. The work employs a modified MACE setup to prevent the electrolyte influence on the rear side and increase the photocurrent collection by modifying the front and rear electrode patterns. The increment in the annealing temperature up to 900 ºC dissolves the surface phosphorus clusters and activates the interstitial phosphorus atoms. The optical measurements and Hall mobility confirm the increased active phosphorus atoms. However, the surface oxidation, tip dissolution, and surface defects reduce the power conversion efficiency above the annealing temperature of 900 ºC. Due to increased shunt resistance, the fabrication modification and the annealing temperature optimization improve the power conversion efficiency and FF by 33.7% and 37.6%, respectively.

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Section: Introductionmentioning

confidence: 99%

Enhancing Si-Nanowire Solar Cell Performance through Fabrication and Annealing Optimization

Muduli,

Kale

2024

Preprint

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“…Однако эффективность данного метода модификации очевидна. В работе [6] показано, что облучение ионами бора при разных углах падения пучка позволяет управлять проводимостью подложки из кремниевых нанонитей. В [7] показана возможность управления смачиваемостью кремниевых нанонитей при воздействии на мишень протонным пучком.…”

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Аморфизация Кремниевых Нанонитей При Облучении Ионами Аргона

Кононина¹,

Балакшин²,

Гончар³

et al. 2022

Письма В Журнал Технической Физики

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Performance enhancement of BF₂ ⁺ implanted poly-Si junctionless transistors by boron segregation and fluorine effect

Ahn

Saraya

Kobayashi

et al. 2020

2020 IEEE Silicon Nanoelectronics Workshop (SNW)

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Control of polysilicon nanowires conductivity by angle-dependent ion implantation

Cited by 4 publications

References 17 publications

Enhancing Si-Nanowire Solar Cell Performance through Fabrication and Annealing Optimization

Enhancing Si-Nanowire Solar Cell Performance through Fabrication and Annealing Optimization

Аморфизация Кремниевых Нанонитей При Облучении Ионами Аргона

Performance enhancement of BF₂ ⁺ implanted poly-Si junctionless transistors by boron segregation and fluorine effect

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Control of polysilicon nanowires conductivity by angle-dependent ion implantation

Cited by 4 publications

References 17 publications

Enhancing Si-Nanowire Solar Cell Performance through Fabrication and Annealing Optimization

Enhancing Si-Nanowire Solar Cell Performance through Fabrication and Annealing Optimization

Аморфизация Кремниевых Нанонитей При Облучении Ионами Аргона

Performance enhancement of BF2 + implanted poly-Si junctionless transistors by boron segregation and fluorine effect

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Performance enhancement of BF₂ ⁺ implanted poly-Si junctionless transistors by boron segregation and fluorine effect