2019
DOI: 10.1016/j.chemphys.2018.12.004
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Electronic properties of WS2 and WSe2 monolayers with biaxial strain: A first-principles study

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Cited by 73 publications
(31 citation statements)
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“…4(c). The parameter ∆, describing the orbital gap at K and K' valley, decreases as we increase the lattice constant in agreement with literature [48,54,[75][76][77][78]. Keeping the orbital decomposed band structure ( Fig.…”
Section: Geometry Band Structure and Fitted Resultssupporting
confidence: 89%
“…4(c). The parameter ∆, describing the orbital gap at K and K' valley, decreases as we increase the lattice constant in agreement with literature [48,54,[75][76][77][78]. Keeping the orbital decomposed band structure ( Fig.…”
Section: Geometry Band Structure and Fitted Resultssupporting
confidence: 89%
“…In our DFT calculations, the decrease of bandgap and its transition from direct-to-indirect bandgap are similarly observed in Figure 5C. As for compressive strain (i.e., negative strain in Figure 5C), direct-to-indirect bandgap transition is observed at a strain of À1.5%, which is similar to previous reports with MoS 2 (Chang et al, 2013;Yun et al, 2012;Muoi et al, 2019). The bandgap changes and its direct-to-indirect transition could be explained by strain-induced modification of the coupling strength between atomic orbitals in TMDs.…”
Section: Resultssupporting
confidence: 89%
“…semiconducting TMDs such as 2H-WS 2 , which results in direct-indirect band gap transition (Yun et al, 2012;Wang et al, 2015;Shi et al, 2013;Chang et al, 2013;Desai et al, 2014;Johari and Shenoy, 2012;Peelaers and Van de Walle, 2012;Lu et al, 2012;Zhang et al, 2013;Maniadaki et al, 2016;Muoi et al, 2019). Accordingly, the growth mechanism in CVD remains to be further explored to understand and modulate the strain effects on the electronic properties of few-layered WS 2 .…”
Section: Open Accessmentioning
confidence: 99%
“…A new advantage in the nanoscale materials opened up a new window for twodimensional dichalcogenides (TMDCs). MX 2 such as MoS 2 , MoSe 2 [20], WS 2 and WSe 2 [21,22] has sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. Transition metal dichalcogenide compounds also have a similar structure with graphite, which can be made by chemical vapor deposition such as MoS 2 [23]; in addition, the 2D MoS 2 sheets are made by micro-mechanical cleavage as old as grapheme [23].…”
Section: Introductionmentioning
confidence: 99%