Electronic properties of vacancy–oxygen complex in Ge crystals

Markevich, V. P.; Hawkins, I. D.; Peaker, А. R.; Litvinov, V. V.; Мурин, Л. И.; Dobaczewski, L.; Lindström, J. L.

doi:10.1063/1.1504871

Cited by 68 publications

(44 citation statements)

References 10 publications

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“…The origins of these defects may be vacancies, interstitials, impurities, or various vacancy complexes, among others. Table 1 shows a summary of the defects observed using the deep level transient spectroscopy (DLTS) technique [124][125][126][127][128][129][130][131][132][133][134][135][136]. Thus, elaborate control of the defect formation in the Ge LSI process is necessary because Ge-Ge bonds are weaker than those in the conventional Si case.…”

Section: Defect Properties Of Ge 1−x Sn Xmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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Section: Defect Properties Of Ge 1−x Sn Xmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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“…First of all, considerable interest is attracted to trapping of mobile vacancies at oxygen atoms resulting in formation of oxygen-vacancy pairs, the so-called A-centers as in the nomenclature of defects in irradiated Si [2,23]. These defects have been extensively studied by Hall effect measurements and DLTS spectroscopy; see for instance [24][25][26] and the literature contained therein. There, Hall effect measurements on irradiated oxygen-rich n-and p-Ge have revealed two dominant oxygen-related defects whose energy states are at ≈ E C − 0.24 eV and ≈ E V + 0.27 eV, correspondingly [26].…”

Section: Role Of Oxygen In Defect Formation In Irradiated N-gementioning

confidence: 99%

“…There, Hall effect measurements on irradiated oxygen-rich n-and p-Ge have revealed two dominant oxygen-related defects whose energy states are at ≈ E C − 0.24 eV and ≈ E V + 0.27 eV, correspondingly [26]. This information correlates well with the electronic properties of the dominant oxygen-related electron and hole traps observed in oxygenrich irradiated n-Ge by DLTS and LDLTS [26]. It is argued on the basis of the collected data that the A-center in Ge has the two acceptor states indicated above.…”

Section: Role Of Oxygen In Defect Formation In Irradiated N-gementioning

confidence: 99%

“…These defects have been extensively studied by Hall effect measurements and DLTS spectroscopy; see for instance [24][25][26] and the literature contained therein. There, Hall effect measurements on irradiated oxygen-rich n-and p-Ge have revealed two dominant oxygen-related defects whose energy states are at ≈ E C − 0.24 eV and ≈ E V + 0.27 eV, correspondingly [26]. This information correlates well with the electronic properties of the dominant oxygen-related electron and hole traps observed in oxygenrich irradiated n-Ge by DLTS and LDLTS [26].…”

Section: Role Of Oxygen In Defect Formation In Irradiated N-gementioning

confidence: 99%

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Radiation-produced defects in germanium: experimental data and models of defects

Emtsev

Полоскин

Oganesyan

et al. 2017

Физика И Техника Полупроводников

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The problem of radiation-produced defects in n-Ge before and after n-> p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient Spectroscopy. The picture of the dominant radiation defects in irradiated n-Ge before n-> p conversion appears to be complicated, since they turn out to be neutral in n-type material and unobserved in the electrical measurements. It is argued that radiation-produced acceptors at ~ EC-0.2 eV previously ascribed to vacancy-donor pairs (E-centers) play a minor role in the defect formation processes under irradiation. Acceptor defects at ~ EV+0.1 eV are absolutely dominating in irradiated n-Ge after n-> p conversion. All the radiation defects under consideration were found to be dependent on the chemical group-V impurities. Together with this, they are concluded to be vacancy-related, as evidenced positron annihilation experiments. A detailed consideration of experimental data on irradiated n-Ge shows that the present model of radiation-produced defects adopted in literature should be reconsidered. DOI: 10.21883/FTP.2017.12.45178.8599

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“…Additionally, high concentrations have been incorporated as C has been used to reduce the n-type copant diffusion in Ge [12]. The oxygen dimer and the A-center are the main oxygen-related defects in Ge [1,14,22,23]. Under irradiation in Si, O and C associate to form the C i O i defect [24,25].…”

Section: Introductionmentioning

confidence: 99%

Isovalent doping and the CiOi defect in germanium

Christopoulos

Sgourou

Вовк

et al. 2017

J Mater Sci: Mater Electron

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Oxygen-carbon defects have been studied for decades in silicon but are less well established in germanium. In the present study we employ density functional theory calculations to study the structure of the C i O i defect in germanium. Additionally, we investigate the interaction the C i O i defect with isovalent dopants such as silicon and tin. It is calculated that the C i O i defects will preferentially form near isovalent dopants in germanium. Interestingly the structure of the dopant-C i O i defects is different with the Sn residing next to the O i whereas the Si atom bonds with the C i . The differences in the structure of C i O i defects in the vicinity of isovalent dopants are discussed.

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Electronic properties of vacancy–oxygen complex in Ge crystals

Cited by 68 publications

References 10 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Radiation-produced defects in germanium: experimental data and models of defects

Isovalent doping and the CiOi defect in germanium

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