Electronic properties of thin Au/nanoporous-Si/n-Si structures

Dittrich, Th.; Kliefoth, K.; Sieber, I.; Rappich, Jörg; Rauscher, Stefan; Timoshenko, V. Yu.

doi:10.1016/0040-6090(95)08087-2

Cited by 17 publications

(3 citation statements)

References 22 publications

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Section: Resultsmentioning

confidence: 99%

“…It is known that the hydrogenated surface of meso-and nanoporous silicon is very well passivated. 22,23 An open question is still whether the hydrogenated Si surface is passivated electrochemically during the formation of the pores or chemically by processes which occur after the pore formation. Figure 7 shows a typical current/voltage characteristic and the respective dependencies of the PL intensity and of the PV amplitude for p-Si͑100͒ in 4 M HF, on the applied potential ͑increasing potential branch͒.…”

Section: Hydrogen Evolution and Higher Concentrated Hf Solu-mentioning

confidence: 99%

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Band Bending and Nonradiative Recombination at Si Surfaces during Electrochemical Treatment in Aqueous Fluoride Solution

Yahyaoui¹,

Dittrich²,

Burke³

et al. 2002

J. Electrochem. Soc.

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In situ photovoltage ͑PV͒ and photoluminescence ͑PL͒ are used to obtain information about the band bending of Si and the PL quenching by nonradiative ͑nr͒ surface recombination during electrochemical treatments of silicon in aqueous fluoride solutions. The onset of the porous silicon formation in diluted NH 4 F solution is accompanied by a decrease of nr surface recombination. Intensive electrochemical etching leads to an increase of nr surface recombination, to positively charged surface states, and to a strong increase of the current density. The increase of the current density is higher than expected for an ideality factor of 1, which gives evidence for a decrease of the effective barrier height during porous silicon formation. The evolution of hydrogen and its penetration into near surface regions lead to the formation of nr surface defects. The lowest nr surface recombination in the regime of porous silicon formation has been observed in higher concentrated HF solution even at high current densities. Therefore, the intermediates of the reactions which lead to pore formation are more of an ionic nature than like Si dangling bonds. Negatively polarized intermediate states ͑charged species or dipoles͒ arise when the electrolyte reaches the Si surfaces during the etchback of oxide layers.

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Section: Resultsmentioning

confidence: 99%

Section: Hydrogen Evolution and Higher Concentrated Hf Solu-mentioning

confidence: 99%

Band Bending and Nonradiative Recombination at Si Surfaces during Electrochemical Treatment in Aqueous Fluoride Solution

Yahyaoui¹,

Dittrich²,

Burke³

et al. 2002

J. Electrochem. Soc.

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“…The method has been successfully applied to the study of quantum wells [1], quantum dots [2], multilayer heterojunctions [3], etc. Nevertheless, there are not many works devoted to the DLTS of nanocrystalline and porous Si [4,5], since there are some difficulties in the interpretation of complex relaxation spectra of nanocrystalline semiconductors with quasi-continued subbands of localized states in an energetic gap [6,7].…”

Section: Introductionmentioning

confidence: 99%

Overcharging of porous silicon localized states at gas adsorption

Skryshevsky¹,

Zinchuk²,

Benilov³

et al. 2006

Semicond. Sci. Technol.

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The behaviour of localized states in Pd/nano-or mesoporous Si/p-Si heterojunctions is studied by the DLTS technique in a vacuum and different atmospheres: ambient air, Ar, N 2 , CO 2 , O 2 . The complex DLTS spectra of both signs related to electron and hole traps in porous Si are detected. The intensity of DLTS peaks and activation energy is shown to be dependent on the morphology of the porous layers and ambient atmosphere in which DLTS measurements were carried out. The shift of activation energy with increase of the applied reverse voltage is interpreted from the point of view of a spatially inhomogeneous distribution of localized states in a porous layer. The cyclic transformation of DLTS spectra is observed for consecutive measurements in a vacuum and ambient atmosphere. Oxygen adsorption (at partial pressure of a few mbar) results in strong passivation of deep traps in mesoporous Si.

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Electrochemistry of metals and semiconductors in fluoride media

Noel

Suryanarayanan

2005

J Appl Electrochem

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The electrochemical surface transformations and diverse applications of a variety of metals and semiconductors in a wide range of fluoride media such as aqueous, non-aqueous media, liquid HF media, room temperature fluoride melts and molten fluoride media with a melting range covering 50-1000°C are reviewed. Nickel shows excellent corrosion resistance in the absence of water. The anodic performance of this metal in electrochemical perfluorination and NF 3 production is discussed. Compact carbon materials serve as anodes in fluorine generators. In high temperature melts, they perform as consumable anodes. Graphitic carbon undergoes intercalation/ de-intercalation process and related battery applications. Cu/CuF 2 couple is a good reference electrode. Pt and vitreous carbon materials are the inert electrodes of choice for electro analytical applications. Electrodeposition of Lithium as a non-dendritic uniform phase is important in Lithium metal based secondary batteries. High temperature fluoride melts are used in electro-deposition of valve metals such as Nb, Ta, and Ti. The stability and decomposition of fluoride complexes in these media are of interest.

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Electronic properties of thin Au/nanoporous-Si/n-Si structures

Cited by 17 publications

References 22 publications

Band Bending and Nonradiative Recombination at Si Surfaces during Electrochemical Treatment in Aqueous Fluoride Solution

Band Bending and Nonradiative Recombination at Si Surfaces during Electrochemical Treatment in Aqueous Fluoride Solution

Overcharging of porous silicon localized states at gas adsorption

Electrochemistry of metals and semiconductors in fluoride media

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