IMPACT OF GAS ADSORPTION AND pH OF SOLUTIONS ON RADIATIVE LIFETIME OF MODIFIED POROUS SILICON LAYERSA. I. Benilov, I. V. Gavrilchenko, I. V. Benilova, V. A. Skryshevsky, M. CabreraThe time-resolved photoluminescence and radiative decay time of modified layers of porous silicon (PS) were studied at the adsorption of saturated organic vapors and buffers solutions with different pH. As-prepared PS samples were compared with ones after oxidation and deposition of poly (3,4-ethylenedioxythiophene) film. New type transducer for pH meter based on radiative decay time measurement of modified PS layers is proposed. The 1.9 times reduction of radiative lifetime of Sband is observed at the increasing of pH value from 2 to 9.Key words: porous silicon, photoluminescence, adsorption, buffers solutions. Áóëî äîñë³äaeåíî ê³íåòèêó ôîòîëþì³íåñöåíö³¿ òà ÷àñ aeèòòÿ âèïðîì³íþâàëüíî¿ ðåêîìá³-íàö³¿ ìîäèô³êîâàíèõ øàð³â ïîðóâàòîãî êðåìí³þ â óìîâàõ àäñîðáö³¿ íàñè÷åíèõ îðãàí³÷íèõ ïàð³â òà áóôåðíèõ ðîç÷èí³â ç ð³çíèìè çíà÷åííÿìè pH. Ùîéíî âèãîòîâëåí³ çðàçêè ïîðóâà-òîãî êðåìí³þ áóëî ïîð³âíÿíî ³ç çðàçêàìè, ùî áóëî îêèñëåíî òà ïîêðèòî øàðîì ïîë³-3,4-åòèëäèîêñèòèîôåíó. Çàïðîïîíîâàíî íîâèé òèï òðàíñäþñåðà, ùî áàçóºòüñÿ íà âèì³ð³ âèïðî-ì³íþâàëüíîãî ÷àñó aeèòòÿ, ùî ÷óòëèâèé äî ð³âíÿ pH. Ñïîñòåð³ãàºòüñÿ çìåíøåííÿ ó 1.9 ðàç³â âèïðîì³íþâàëüíîãî ÷àñó aeèòòÿ S-ñìóãè ïðè çì³í³ pH ç 2 äî 9.Êëþ÷îâ³ ñëîâà: ïîðóâàòèé êðåìí³é, ôîòîëþì³íåñöåíö³ÿ, àäñîðáö³ÿ, áóôåðí³ ðîç÷èíè.A. I. Benilov, I. V. Gavrilchenko, I. V. Benilova, V. A. Skryshevsky, M. Cabrera