Electronic properties of the space charge layer of the clean SnO2(110) surface

Electronic Properties and Origin of Gap States on the Clean SnO2(110) Surface Exposed to Oxygen

“…In order to check the origin of the filled electronic states localized in the band gap of the investigated clean SnO,(llO) surface we performed additional studies of the influence of ion bombardment as well as oxygen chemisorption. spectra Y ( E ) of the cleanest SnO, (1 10) surface prepared by ion bombardment and annealing (IBA) at 900 K, as in our previous studies [15]. Using the recently proposed procedure [15], the work function cp was calculated by numerical fitting of the low energy part of this spectrum with Fermi distribution function [14] as well as the ionization energy @ using numerical fitting with the high energy part of these spectra using Kane's [18] theory with the law Y (hv) = ( E -E,)3'2.…”

“…spectra Y ( E ) of the cleanest SnO, (1 10) surface prepared by ion bombardment and annealing (IBA) at 900 K, as in our previous studies [15]. Using the recently proposed procedure [15], the work function cp was calculated by numerical fitting of the low energy part of this spectrum with Fermi distribution function [14] as well as the ionization energy @ using numerical fitting with the high energy part of these spectra using Kane's [18] theory with the law Y (hv) = ( E -E,)3'2. Both of these values determined were equal to those previously published [15].…”

“…Using the recently proposed procedure [15], the work function cp was calculated by numerical fitting of the low energy part of this spectrum with Fermi distribution function [14] as well as the ionization energy @ using numerical fitting with the high energy part of these spectra using Kane's [18] theory with the law Y (hv) = ( E -E,)3'2. Both of these values determined were equal to those previously published [15]. Moreover, from this spectrum one can easily see the existence of two bands of filled electronic states localized in the band gap below the Fermi level E,.…”

“…In our previous paper [15] we presented the results of preliminary studies of the electronic properties of the space charge layer of the atomically clean Sn02(110) surface with (1 x 1) atomic structure prepared by ion bombardment and annealing (IBA) at 900 K, using the photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) control. We determined the values of the work function q = (4.20 0.10) eV, and absolute band bending eV, = ( -1.63 0.13) eV.…”

Photoemission surface characterization of (001) In2O3 thin film through the interactions with oxygen, water and carbon monoxide: Comparison with (111) orientation

“…It is known that evolution of BE VB directly reflects the changes in a band bending and in the electrostatic surface potential barrier U S ( BE VB = U S ) [32]. This means that regular and expected changes of surface potential were observed under O 2 treatments ( U S increased) and under post-heating ( U S decreased).…”