Electronic properties of single-crystal diamonds heavily doped with boron

Буга, С. Г.; Бланк, В. Д.; Terent’ev, S. A.; Кузнецов, М. С.; Nosukhin, S. A.; Kulbachinskii, V. A.; Krechetov, A. V.; Кытин, В. Г.; Kytin, G. A.

doi:10.1134/s1063776107040097

Cited by 8 publications

(3 citation statements)

References 12 publications

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“…In these samples, the activation energy of the thermal-field mechanism of the valence band conductivity is 170 meV with the multiplier A = 1.5 • 10 5 s −1 • K −2 and below, whereas for the hopping impurity band conductivity the activation energy is observed to be just 10−20 meV. The diamond single crystals with the high boron concentration (10 19 −10 20 cm −3 ) were also measured by the authors [147] in the method of the temperature dependence of the resistance. The temperature region above 110−200 K was observed to have the activation type of conductivity with the activation energy within the range 30−90 meV.…”

Section: Hopping Conduction For the Impurity Bandmentioning

confidence: 82%

Characterization of boron-doped single-crystal diamond by electrophysical methods (review)

V.I.

A.V.

et al. 2023

Technical Physics

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A critical analysis of the existing methods of controlling the concentration of impurity and majority charge carriers in wide bandgap semiconductors and the issues of improvement of modern diagnostics of the main electrophysical properties of single-crystal diamond are considered based on the results of our studies and the works of other authors. It was found that independent assessment of impurity concentration and concentration of free charge carriers is of fundamental importance for semiconductor diamond due to very low (less than 1%) degree of ionization of the introduced impurity. The advantages and prospects of admittance spectroscopy as a diagnostic method for ultrawide bandgap semiconductors are shown and solutions aimed at the correct interpretation of the experimental data are proposed. The high ionization energy of boron impurity in diamond (370 meV) results in a strong frequency dispersion of the measured barrier capacitance. It is shown that under disturbance of quasi-static conditions in capacitance-voltage measurements, low frequencies and high temperatures should be used for correct assessment of the charge carrier concentration. The results of electrophysical studies are compared with traditional measurements of impurity concentration in diamond by optical methods. A decrease of hole activation energy from the boron impurity level from 325 to 100 meV was found upon increasing the boron concentration NA from 2·1016 to 4·1019 cm-3. The transition to the hopping mechanism of conductivity within the impurity (acceptor) band with thermal activation energy of 10-20 meV was registered for NA≥5·1018 cm-3 at temperatures of 120-150 K. Keywords: single-crystal diamond, boron impurity, charge carrier concentration, activation energy, admittance spectroscopy, capacitance-voltage measurements.

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Section: Hopping Conduction For the Impurity Bandmentioning

confidence: 82%

Characterization of boron-doped single-crystal diamond by electrophysical methods (review)

V.I.

A.V.

et al. 2023

Technical Physics

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“…Aluminium was introduced as a nitrogen getter. The nitrogen concentration did not exceed 10 17 cm À3 [3].…”

Section: Artiécial Diamond and A Bolometric Structurementioning

confidence: 95%

Fast bolometer built in an artificial HPHT diamond matrix

et al. 2010

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“…Up to now, besides early chemical vapor deposition (CVD) technology [7,8] and ion-implantation methods [9,10], HPHT method presents to be a good way for synthesis of the diamond [11][12][13][14]. Li et al [15] obtained boron-doped diamond from a Fe-Ni-C-B catalytic system made by powder metallurgy method at 5.4-5.7 GPa and 1573-1673 K. Ekimov et al [16,17] synthesized microcrystalline boron-doped diamond powders in the C-H-B system at a pressure of 8 GPa and temperatures above 2000 K. Sidorov et al [18] synthesized polycrystalline carbonado-like diamonds in the systems boron-graphite and B 4 C-graphite at P = 9 GPa and T = 2500-2800 K. Buga et al [19] synthesized boron-doped diamond samples from a seed by the temperature gradient method at a pressure of *Corresponding author (email: wwzhang@cau.edu.cn) P=5.5 GPa and a temperature of T= 1650 K in the Fe-Al-C-B system. Zang et al [20] succeeded in synthesis borondoped diamond under HPHT using B-doped graphite intercalation compositions (GICs) as carbon sources.…”

mentioning

confidence: 99%

Synthesis of boron-doped diamond with laser heated diamond anvil cell

Zhang

Chen

et al. 2011

Chin. Sci. Bull.

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Boron-doped diamond has been synthesized from graphite mixed with different ratio of B 4 C at high pressure high temperature (HPHT) using laser heated diamond anvil cell. The starting composition was transformed to diamond compound at pressure ~9 GPa, 2300-2400 K as indicated by the in-situ X-ray diffraction pattern with synchrotron radiation source. Raman spectrum of the recovered specimen from HPHT state confirmed that boron has been doped into diamond lattice. boron-doped diamond, X-ray diffraction, high pressure, Raman spectroscopy Citation:Zhang W W, Chen L C, Jin C Q, et al. Synthesis of boron-doped diamond with laser heated diamond anvil cell.

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Electronic properties of single-crystal diamonds heavily doped with boron

Cited by 8 publications

References 12 publications

Characterization of boron-doped single-crystal diamond by electrophysical methods (review)

Characterization of boron-doped single-crystal diamond by electrophysical methods (review)

Fast bolometer built in an artificial HPHT diamond matrix

Synthesis of boron-doped diamond with laser heated diamond anvil cell

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