Abstract:Hetero-junction array of p+-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p+-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 104 at ±3 V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the… Show more
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