Optoelectronic Devices: III Nitrides 2005
DOI: 10.1016/b978-008044426-0/50017-1
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Electronic Properties of Intrinsic and Heavily Doped 3C–, nH–SiC (n = 2, 4, 6) and III-N (III = B, Al, Ga, In)

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“…Their energies now lie near the edge but within the band of delocalized states. Screening of the crystal host electrons by these new free carriers emphasizes this effect by narrowing the intrinsic bandgap energy [104] (see fig. 2e).…”
mentioning
confidence: 99%
“…Their energies now lie near the edge but within the band of delocalized states. Screening of the crystal host electrons by these new free carriers emphasizes this effect by narrowing the intrinsic bandgap energy [104] (see fig. 2e).…”
mentioning
confidence: 99%