Electron transport in bulk n-doped 3C-SiC by using a non-equilibrium quantum kinetic theory

Corrêa, Amanda M. D.; Rodrigues, Clóves Gonçalves; Luzzi, Roberto

doi:10.1140/epjb/e2019-100316-0

Cited by 4 publications

References 41 publications

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Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

Rodrigues

Luzzi

2021

Pramana - J Phys

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In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinear quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations using Monte Carlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier concentrations. The agreement between the results obtained using nonlinear quantum kinetic theory, with those of Monte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.

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Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

Rodrigues

Luzzi

2021

Pramana - J Phys

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6 Non-equilibrium statistical operator method

Rodrigues

2021

Non-Equilibrium Thermodynamics and Physical Kinetics

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TRANSPORTE DE CARGA ELÉTRICA NO SEMICONDUTOR 4H-SiC DOPADO TIPO p

Vasconcelos

Rodrigues

2020

EXATEC

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Neste trabalho foi realizado um estudo teórico sobre o transporte de carga no semicondutor carbeto de silício na forma 4H-SiC dopado tipo p e submetido a campos elétricos de baixa intensidade. A pesquisa foi realizado utilizando-se uma equação diferencial de movimento. A dependência do transporte de carga elétrica em função da intensidade e direção do campo elétrico aplicado e da temperatura foi analisada. Foi obtido que a maior mobilidade ocorre quando a direção do campo elétrico aplicado é perpendicular ao eixo cristalográfico c do cristal semicondutor 4H-SiC, e esta sofre uma redução de aproximadamente 67% com o aumento da temperatura de 0 até 100ºC.

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Electron transport in bulk n-doped 3C-SiC by using a non-equilibrium quantum kinetic theory

Cited by 4 publications

References 41 publications

Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

6 Non-equilibrium statistical operator method

TRANSPORTE DE CARGA ELÉTRICA NO SEMICONDUTOR 4H-SiC DOPADO TIPO p

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