Electronic properties of graphene/p-silicon Schottky junction

Luongo, Giuseppe; Bartolomeo, Antonio Di; Giubileo, Filippo; Chavarin, Carlos Alvarado; Wenger, Christian

doi:10.1088/1361-6463/aac562

Cited by 70 publications

(46 citation statements)

References 34 publications

(49 reference statements)

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“…Graphene is commonly produced by exfoliation from graphite [28,29], epitaxial growth on SiC [30] or chemical vapor deposition (CVD) [31,32]. In particular, CVD produces uniform and large-scale graphene flakes of high-quality and is compatible with the silicon technology; therefore, it has been largely exploited to realize new electronic devices such as diodes [33][34][35][36], transistors [37][38][39], field emitters [40,41], chemical-biological sensors [42,43], optoelectronic systems [44], photodetectors [45][46][47][48][49][50] and solar cells [51].…”

Section: Introductionmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.

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Section: Introductionmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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“…In the framework of Crowell–Sze formalism, the Richardson constant is given by A * = 4 πem * k 2 / h 3 which for n‐doped silicon is A * ≅ 112 A cm −2 K −2 . However, the experimental value of Richardson constant in the graphene–silicon Schottky junction is repeatedly reported to be much lower . The presence of an interfacial dielectric layer is considered as a possible origin for the reduced Richardson constant .…”

Section: Resultsmentioning

confidence: 98%

“…However, the experimental value of Richardson constant in the graphene–silicon Schottky junction is repeatedly reported to be much lower . The presence of an interfacial dielectric layer is considered as a possible origin for the reduced Richardson constant . Considering the momentum‐position and energy‐time uncertainty principles, Trushin has shown that the out‐of‐plane velocity of carriers in graphene ( v z ) is fundamentally related to the quasiparticle lifetime (τ) and out‐of‐plane momentum uncertainty (Δ p z ) as

v_{z} ~ ℏ / (Δ p_{z} τ) ~ Δ z / τ

where Δ z stands for the layer thickness .…”

Section: Resultsmentioning

confidence: 99%

Sequentially Assembled Graphene Layers on Silicon, the Role of Uncertainty Principles in Graphene–Silicon Schottky Junctions

Javadi

Noroozi

Mazaheri

et al. 2019

Advanced Optical Materials

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Owing to the atomic thickness of graphene, the out‐of‐plane velocity of carriers is entangled with the thickness of graphene layer as well as the quasiparticle lifetime by means of the position–momentum and energy–time uncertainty principles. The out‐of‐plane velocity is vital for thermionic emission of carriers across the Schottky junction at graphene–silicon interface. In this report, the effect of graphene layer thickening on the electronic and optoelectronic processes is studied in hybrid graphene–silicon Schottky junctions. The thickness of graphene layer is systematically increased via sequentially assembling of chemical vapor deposited (CVD‐grown) graphene layers onto silicon. The assembled graphene layers are found to behave as structurally uncoupled layers leading to a universal scaling of in‐plane current with the number of assembled layers. The reverse saturation current of the graphene–silicon junctions strongly correlates with the number of assembled graphene layers indicating the critical influence of graphene layer thickness on the electronic and optoelectronic properties of graphene–silicon junctions. The experimental observations are quantitatively analyzed based on the uncertainty principles. The effect of graphene layer thickening on the concentration and diffusion length of excess photogenerated charge carriers in graphene is investigated through lateral photovoltage spectroscopy. This work sheds light on the fundamental role of uncertainty principles in the hybrid 2D/3D junctions.

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“…The value estimated for A * is 142 A cm −2 K −2 . [41,42] In this way, the effective barrier heights were evaluated and are equal to 0.96 and 0.75 eV for the dark and light cases, respectively.…”

Section: Electrical Characterization Of Multilayer-graphene/si Heteromentioning

confidence: 99%

A Multilayer‐Graphene/Silicon Infrared Schottky Photo‐Diode

Apicella

Fasasi

Wang

et al. 2019

Adv Elect Materials

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more, as will be discussed in the following, the optical properties of the metallic layer at longer wavelengths strongly attenuates the photo-conversion.A promising and widely investigated approach seems to be the exploitation of graphene. The coupling of this 2D semiconductor with Si has been proposed in recent works, such as in refs. [21][22][23][24][25], as a possible solution to develop photodetectors able to work in the long-wavelength range.In this paper, an infrared, lateral Schottky photo-diode based on a multilayer-graphene/intrinsic-silicon (MLG/i-Si) heterojunction is presented. The junction shows a strong gain of the responsivity in the long wavelength region as compared to a standard metal/Si junction. As recently reported by different groups, [26,27] a narrow band-gap (2D) semiconductor in intimate contact with a bulk silicon can induce a band-gap narrowing in the latter, leading to the shift of the band-edge absorption spectrum toward longer wavelengths. In the present work, the Si bandgap narrowing is induced by the MLG which acts as a 2D semiconductor. As a consequence, the overall absorption at longer wavelengths is strongly enhanced and this feature makes the device suitable for sensing applications in infrared light.

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Electronic properties of graphene/p-silicon Schottky junction

Cited by 70 publications

References 34 publications

Contact resistance and mobility in back-gate graphene transistors

Contact resistance and mobility in back-gate graphene transistors

Sequentially Assembled Graphene Layers on Silicon, the Role of Uncertainty Principles in Graphene–Silicon Schottky Junctions

A Multilayer‐Graphene/Silicon Infrared Schottky Photo‐Diode

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