Electronic properties of gated -doped semiconductors

Abstract

The quantum and transport subband mobilities as a function of applied bias were calculated for a gated δ-doped semiconductor. The electronic spectra (envelope wavefunctions, subband energies and Fermi energy) for the structure under bias used as input in the calculations were obtained by either solving self-consistently Schr ödinger and Poisson equations or by solving the Schr ödinger equation with a confining potential determined by the Thomas-Fermi semiclassical approximation. In the first case the screening of the electron-ionized impurity interaction was treated in the random phase approximation, whereas in the latter case the two-dimensional Thomas-Fermi model of screening was used. Results show that although the semiclassical approach offers the advantage of greater simplicity, it describes reliably the carrier mobility in the fundamental subband only. The dependence of the mobility of carriers in individual subbands on applied bias correlates with the evolution with bias of the overlap between subband wavefunctions and the doped-layer region.

Classical magnetotransport in a parabolic quantum well with a strong intersubband scattering

“…In both systems several subbands can be occupied easily with a substantial portion of the electron population in the higher subbands. Much effort of researchers has been concentrated on transport properties of DDLs [8][9][10][11][12][13][14][15][16], and recently the PQWs have been receiving growing attention as well [17][18][19].…”

“…[20]) for an explanation of the dependence of the effective mobility on the carrier density. A number of works have been published [9][10][11]14] devoted to numerical calculation of quantum and transport mobility in delta-doped structures starting from the microscopic quantum mechanics principles. Results of these calculations are valuable for qualitative comparison with the experiment but it becomes very difficult to reverse the problem to extract microscopic scattering characteristics from the experiment.…”

Characterization of periodically -doped semiconductors by capacitance - voltage profiling

“…To interpret the experimental C-V spectra, theoretical C-V spectra were generated by solving self-consistently Schrödinger and Poisson equations for the δ-doped structure under bias (for a full description of the self-consistent procedure see [8]). We considered a structure with five equally spaced doping layers, and 25 electronic subbands were included in the calculations.…”

Single and periodically Si -doped InP grown by LP-MOVPE

“…In the simulation reported here, the Poisson and Schrödinger equations were solved self-consistently within the Hartree approximation for the gated δ-doped structure [17]. The impurities were assumed to be distributed as a Gaussian function.…”