Electronic properties of c‐BN thick film layers obtained on silicon and ceramics substrates

Abstract

A novel thick film has been produced using paste based on single crystal cubic boron nitride powders. The major paste component are particles of cubic boron nitride of different grain shape and size obtained by different methods. Another component is inorganic glass based on bismuth oxide with high wetting characteristics for binding together the particles of c-BN and ensure good adhesion of the layer to the substrate. Structures were crated with c-BN films acting as an insulator which enabled electrical characterization by means of current-voltage measurements. Observed variation in specimen characteristics resulted primarily from different content of the secondary phase (glass) as well as different types of used c-BN powders. The results of the experimental work has enabled a preliminary analysis of the room temperature conduction mechanisms in structures with c-BN based thick film layers.