Development in patterning technique
of metal–organic frameworks
(MOFs) will facilitate their integration in microelectronics, but
controlling the structure of MOFs at the nanoscale remains a major
challenge. We demonstrate that an electron beam (e-beam) can be used
to pattern a zinc-imidazolate MOF, ZIF-L, at unprecedented resolution
in a direct-write lithographic approach, where the electron-irradiated
MOF functions either as a positive- or negative-tone resist depending
on the level of exposure and developing solvent used. Nanosheets with
adjustable thickness and other nanostructures can be obtained using
a low e-beam with a controlled penetration depth. In addition, electron
irradiation in ZIF-L leads to spatially directed crystallization to
a prototypical MOF ZIF-8 via ligand-vapor treatment. This versatile
strategy opens the door to e-beam-based processing of MOF materials
for various applications.