Electronic properties and interfacial contact of graphene/CrSiTe₃ van der Waals heterostructures

Abstract

Electronic properties and interface contact of Graphene-based heterostructure Graphene/CrSiTe3 (Gr/CrSiTe3) is modulated by tuning the interfacial distance, along with appling an external electric field. Our first-principles calculations show that the...

Tunable Schottky contacts in graphene/XAu4Y (X, Y = Se, Te) heterostructures

“…Their equilibrium interlayer distances were 3.34, 3.38, 3.47, and 3.52 Å respectively, which are comparable with those of other reported heterostructures. 51–55 Therefore, vdW interactions exist in G/XAu 4 Y. The calculated binding energies for G/SeAu 4 Se, G/SeAu 4 Te, G/TeAu 4 Se, and G/TeAu 4 Te at the equilibrium state were 18.16, 18.59, 17.40, and 18.02 meV Å −2 , which all lied within the range 13–21 meV Å −2 , as reported for most layered materials, 56 indicating that these heterostructures are energetically stable.…”

Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties

“…Schottky contacts are usually found to arise in graphenebased vdWHs; graphene/BX (X = P, As) [88], graphene/HfN 2 [89] etc, while Ohmic contacts have rarely been found to occur, for example, graphene/SnSe 2 [90] vdWH, forms an ntype Ohmic contact. The tuning of SBH and transition from Schotty to ohmic contact in graphene-based vdWHs can be done by manipulating the interlayer distance, external electric field, and application of various types of strain [91][92][93][94][95][96]. High speed Schottky devices can be developed based on Graphene/GeC vdWHs via dynamically switching between Schottky and Ohmic contact [97].…”