Tunable Schottky contacts in graphene/XAu₄Y (X, Y = Se, Te) heterostructures

Abstract

Vertical strain and external electric field can regulate interfacial charge transfer, resulting in the tunable Schottky barriers of G/XAu4Y heterostructures.

Effects of strain and thickness on the mechanical, electronic, and optical properties of Cu2Te

“…These materials have been synthesized in various stoichiometric ratios, including MX 2 (M: transition metal atoms; X: S, Se, and Te), [10][11][12][13][14] MX, [15][16][17][18][19] and M 2 X. 20,21 Among these, 2D transition-metal-rich TMCs (M 2 X) exhibit a diverse range of properties, such as tunable electronic band structures, 20 reversible thermal structural phase transitions, [21][22][23][24] excellent photocatalytic performance, 25,26 two-dimensional magnetic characteristics, 21,27 topological properties, 28 and a negative Poisson's ratio (auxetic materials). [29][30][31] These unique properties endow them with potential for the development of next-generation electronic and optoelectronic devices.…”