Electronic photonic integrated circuits for high speed, high resolution, analog to digital conversion

Kärtner, Franz X.; Akiyama, S.; Barbastathis, George; Barwicz, Tymon; Byun, Hyunil; Danielson, David T.; Gan, Fuwan; Grawert, F.J.; Holzwarth, Charles W.; Hoyt, Judy L.; Ippen, Erich P.; Kim, M.; Kimerling, Lionel C.; Liu, Jifeng; Michel, Jürgen; Olubuyide, O.O.; Orcutt, Jason S.; Park, M.; Perrott, Michael H.; Popović, Miloš A.; Rackich, P. T.; Ram, Rajeev J.; Smith, Henry I.; Watts, Michael R.

doi:10.1117/12.655762

Cited by 15 publications

(10 citation statements)

References 32 publications

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“…This phase shift is exploited in the design of optical switches [14,15], Mach-Zehnder interferometers [31,32], super-continuum generation [33], and all-optical wavelength converters [10]. The real part of the complex refractive-index is given by [29,30]:…”

Section: Introductionmentioning

confidence: 99%

“…Nonlinear optical properties of silicon have been utilized in the design of modulators, receivers, and filters in optical communication demonstrations with bit rates on the order of 1Tbits/sec [3] and real-time A-to-D converters with sampling rates of several tens of Gbits/sec [10]. A major advantage of silicon photonic devices is that they can be produced efficiently by taking advantage of the mature silicon processing technology that has been extensively developed to permit low-cost, large-volume electronic circuit production.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast nonlinear optical studies of silicon nanowaveguides

Motamedi¹,

Khilo²,

Kärtner³

et al. 2012

Opt. Express

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Abstract:Results of a self-consistent ultrafast study of nonlinear optical properties of silicon nanowaveguides using heterodyne pump-probe technique are reported. The two-photon absorption coefficient and freecarrier absorption effective cross-section were determined to be 0.68cm/GW, and 1.9x10 −17 cm 2 , respectively and the Kerr coefficient and free-carrier-induced refractive index change 0.32x10 −13 cm 2 /W, and −5.5x10 −21 cm 3 , respectively. The effects of the proton bombardment on the linear loss and the carrier lifetime of the devices were also studied. Carrier lifetime reduction from 330ps to 33ps with a linear loss of only 14.8dB/cm was achieved using a proton bombardment level of 10 15 /cm 2 . ©2012 Optical Society of America

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrafast nonlinear optical studies of silicon nanowaveguides

Motamedi¹,

Khilo²,

Kärtner³

et al. 2012

Opt. Express

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“…It was shown by Walden [1], that electronic jitter is limiting the progress in more advanced electronic ADCs to an increase in resolution-sampling speed product to about 2 effective number of bits (ENOB) per decade. The hope is that photonic technologies, such as femtosecond lasers, optical integration and multiplexing enables the miniaturization of high repetition rate modelocked lasers, electro-optic conversion, filter and detector technologies to overcome the electronic bottleneck [2,3,4,5]. Femtosecond lasers are providing a stream of sampling pulses with much reduced timing jitter, when compared to integrated microwave oscillators, approaching attosecond jitter levels over milliseconds of measurement time [6].…”

Section: Introductionmentioning

confidence: 99%

Photonic analog-to-digital conversion with electronic-photonic integrated circuits

et al. 2008

Self Cite

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Photonic Analog-to-Digital Conversion (ADC) has a long history. The premise is that the superior noise performance of femtosecond lasers working at optical frequencies enables us to overcome the bottleneck set by jitter and bandwidth of electronic systems and components. We discuss and demonstrate strategies and devices that enable the implementation of photonic ADC systems with emerging electronic-photonic integrated circuits based on silicon photonics. Devices include 2-GHz repetition rate low noise femtosecond fiber lasers, Si-Modulators with up to 20 GHz modulation speed, 20 channel SiN-filter banks, and Ge-photodetectors. Results towards a 40GSa/sec sampling system with 8bits resolution are presented.

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“…Previous studies have demonstrated Ge-on-Si photodiodes with epitaxial material grown by ultra-high vacuum chemical vapor deposition [7] and by low-pressure chemical vapor deposition [6]. The Ge-on-Si diodes measured in this study were targeted for on-chip photonic applications, and details of the fabrication are described in [8].…”

Section: Measured Characteristics Of Ge-on-si Photodiodesmentioning

confidence: 99%

“…For the flash simulations (SNR plots), a conservative 1000K blackbody source is used. The dark current numbers used in the analysis were taken from measurements of Ge-on-Si photodiodes fabricated for high-speed on-chip integrated photonic applications [6]. These diodes were not optimized for imaging applications.…”

Section: Performance Modeling For Sige Vis-nir Sensormentioning

confidence: 99%

Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

et al. 2009

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SiGe based Focal Plane Arrays offer a low cost alternative for developing visible-NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's.Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond. TECHNICAL DISCUSSIONThere is significant interest in developing low cost IR Sensors for a variety of applications such as low cost thermal imagers and the ability to detect and defeat incoming threats. There are several other technologies such as InGaAs, InSb and HgCdTe, which cover different part of the IR Spectrum. HgCdTe IR focal plane arrays are being developed for 3-5 and 8-14 micron applications [1]. InSb is being used for 3-5 micron applications [2].

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Electronic photonic integrated circuits for high speed, high resolution, analog to digital conversion

Cited by 15 publications

References 32 publications

Ultrafast nonlinear optical studies of silicon nanowaveguides

Ultrafast nonlinear optical studies of silicon nanowaveguides

Photonic analog-to-digital conversion with electronic-photonic integrated circuits

Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

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