Electronic Noise and Fluctuations in Solids

Kogan, Sh. M.

doi:10.1017/cbo9780511551666

Cited by 710 publications

(626 citation statements)

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“…The investigation of shot noise [1][2][3] has proven to be a valuable tool to determine properties which are elusive to the study of current-voltage characteristics. One of the most celebrated examples in this respect is probably the measurement of the fractional charge by means of the study of shot noise in point contacts in the fractional quantum Hall regime.…”

Section: Introductionmentioning

confidence: 99%

Model of qubits as devices to detect the third moment of current fluctuations

et al. 2006

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Under appropriate conditions, controllable two-level systems can be used to detect the third moment of current fluctuations. We derive a master equation for a quantum system coupled to a bath valid to the third order in the coupling between the system and the environment. In this approximation the reduced dynamics of the quantum system depends on the frequency-dependent third moment. Specializing to the case of a controllable two-level system ͑a qubit͒ and in the limit in which the splitting between the levels is much smaller than the characteristic frequency of the third moment, it is possible to show that the decay of the qubit has additional oscillations whose amplitude is directly proportional to the value of the third moment. We discuss an experimental setup where this effect can be seen.

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Section: Introductionmentioning

confidence: 99%

Model of qubits as devices to detect the third moment of current fluctuations

et al. 2006

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“…Low-frequency electronic noise, which is generated inherently by a fluctuation of current passing through an individual transistor, is a key issue for integrated circuit applications 11 . Among various sources of electronic noise, flicker noise, which is often referred to as 1/f (the low-frequency noise with a spectral density that decreases inversely with frequency f), plays an important role 12,13 .…”

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Remarkably low flicker noise in solution-processed organic single crystal transistors

et al. 2018

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Low-frequency noise generated by a fluctuation of current is a key issue for integrating electronic elements into a high-density circuit. Investigation of the noise in organic field-effect transistors is now sharing the spotlight with development of printed integrated circuits. The recent improvement of field-effect mobility (up to 15 cm 2 V −1 s −1 ) has allowed for organic integrated circuits with a relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding of the noise feature will be indispensable to further improve the circuit stability and durability. Here we performed noise measurements in solution-processed organic single crystal transistors, and discovered that a low trap density-of-states due to the absence of structural disorder in combination with coherent band-like transport gives rise to an unprecedentedly low flicker noise. The excellent noise property in organic single crystals will allow their potential to be fully exploited for high-speed communication and sensing applications.

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“…The device used in this paper exhibits the bipolar switching mode. Although such a phenomenological physical switching picture above has been proposed, the detailed characterization and quantitative theoretical analysis of the conduction mechanism is still lacking in the literature.Low frequency noise (LFN) measurement is a technique that can electrically characterize the trapassisted conduction process in dielectrics [17][18][19] NiO [22] (in this paper f refers to the frequency). In this work, we perform LFN measurement on HfO 2 based resistive switching memory to investigate its conduction and switching mechanism.…”

mentioning

confidence: 99%

“…Low frequency noise (LFN) measurement is a technique that can electrically characterize the trapassisted conduction process in dielectrics [17][18][19] NiO [22] (in this paper f refers to the frequency). In this work, we perform LFN measurement on HfO 2 based resistive switching memory to investigate its conduction and switching mechanism.…”

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Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

Jeyasingh

et al. 2012

Phys. Rev. B

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-Low frequency noise measurements were performed on HfO 2 based bipolar resistive switching memory devices. A 1/f α DC noise power spectral density was observed with α~1 for low resistance state and α~2 for high resistance state. We developed an electron tunneling model to elucidate the conduction process which showed that the 1/f α behavior was due to the distribution of relaxation times of electron tunneling between the electrodes and the traps in the conducting filaments. The transition of the slope index α from 1 to 2 at a certain cutoff frequency indicates that there is a tunneling gap formed between electrodes and the residual of the conductive filaments in the high resistance state.Keywords -low frequency noise, resistive switching (RRAM), transition metal oxide, electron tunneling Currently, transition metal oxide based resistive switching memory is extensively studied as one of the most competitive candidates for future non-volatile memory applications due to its simple structure, fast switching speed, great scalability, and compatibility with silicon complementary metal-oxidesemiconductor (CMOS) technology [9][10][11]. The mechanism of resistive switching phenomenon in oxides is usually attributed to the formation/rupture of conductive filaments (CFs) which may consist of oxygen vacancies or metal precipitates [12]. The set process from high resistance state (HRS) to low resistance state (LRS) is interpreted as a dielectric soft breakdown associated with the migration of oxygen ions toward the anode, leaving behind the oxygen vacancies in the bulk oxide to form CFs connecting both electrodes [13]. To reset from LRS to HRS, there are two modes: in the unipolar reset (the reset occurs at the same polarity as the set), Joule-heating-assisted diffusion of oxygen ions from anode and surrounding oxides rupture the CFs by recombination with oxygen vacancies or re-oxidization of the metal precipitates [14]. In the bipolar reset (the reset occurs at the opposite polarity as the set), electric-field-assisted drift of oxygen ions from the oxygen reservoir rupture the CFs [15]. In the bipolar switching mode, oxidizable electrode materials such as Ti, TiN, TaN are usually used to serve as the oxygen reservoir providing the oxygen ions during the reset process [16]. The device used in this paper exhibits the bipolar switching mode. Although such a phenomenological physical switching picture above has been proposed, the detailed characterization and quantitative theoretical analysis of the conduction mechanism is still lacking in the literature.Low frequency noise (LFN) measurement is a technique that can electrically characterize the trapassisted conduction process in dielectrics [17][18][19] NiO [22] (in this paper f refers to the frequency). In this work, we perform LFN measurement on HfO 2 based resistive switching memory to investigate its conduction and switching mechanism. HfO 2 is chosen because HfO 2 based devices exhibit desirable properties such as ultra-fast switching speed (

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Electronic Noise and Fluctuations in Solids

Cited by 710 publications

References 0 publications

Model of qubits as devices to detect the third moment of current fluctuations

Model of qubits as devices to detect the third moment of current fluctuations

Remarkably low flicker noise in solution-processed organic single crystal transistors

Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

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