Electronic level of interstitial hydrogen in GaAs

The effect of Si doping on the electrical properties of B12As2 thin films on (0001) 6H-SiC substrates

“…This phenomenon is similar to the behavior of hydrogen in carbon doped p-type GaAs. 16,17 In p-type GaAs, carbon can incorporate with hydrogen to form a C-H complex, which neutralizes the electrical activity of the carbon. The silicon and hydrogen concentrations shown in a SIMS profile taken from this sample after annealing at 600°C for 30 s were identical.…”

Hydrogen Passivation in Semiconductors

“…Several sharp vibrational features have been attributed to H. In the spectrum which was shown in Fig. 4, the C and H were unintentional contaminants in p-type, LEC-grown GaAs [26]. It is estimated that the concentration of H can be 10 16 cm-3 in LEC-grown crystals [76,79].…”

“…Vibrational bands have also been assigned for H complexed with the As-site acceptors in GaAs; the complexes that have been studied are CAS H [26], SiΑs -H [47], and GeA s -H [40,41]. The H-stretching spectum for CA s -H due to Clerjaud et al [26] is shown in Fig.…”

“…Theory finds [21,22] that H has donor and acceptor states in p-type and n-type GaAs, respectively. Field drift experiments have been performed [23][24][25] and the position for the H donor level has been estimated experimentally [26].…”

Density-functional calculations of carbon diffusion in GaAs

“…20 It might also be expected that C As -H would also be present ͑this has an infrared active C-H stretch mode at 2635 cm Ϫ1 ). 21,22 No such defects have been observed in the ''hydrogen-free'' material. In the case of the possibility of a vacancy-assisted process, it is difficult to see how this could result in dicarbon defects.…”