Electronic Conduction Mechanisms in Insulators

Chiang, Tsung-Han; Wager, John F.

doi:10.1109/ted.2017.2776612

Cited by 45 publications

(38 citation statements)

References 27 publications

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“…The fitting result suggests that Schottky emission is the dominant mechanism; this is mainly determined by the interface between the HfAlO x and the TiN bottom electrode. Although electroforming occurs under a negative bias, since a sufficient number of defects were not formed inside the HfAlO x dielectric, the conduction can be determined by the interface according to the difference in work function between the TiN electrode and HfAlO x layer [38]. On the other hand, for BRS, Ohmic conduction is dominant under linear fitting for ln(I) versus ln(V) with a slope of about 1 in the on-state under a positive bias, as shown in the inset of Figure 4b.…”

Section: Resultsmentioning

confidence: 99%

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Choi

Kim

2020

Coatings

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In this work, we present the nonlinear current–voltage (I–V) characteristics of a complementary resistive switching (CRS)-like curve from a HfAlOx-based memristor, used to implement a high-density cross-point array. A Pt/HfAlOx/TiN device has lower on-current and larger selectivity compared to Pt/HfO2/TiN or Pt/Al2O3/TiN devices. It has been shown that the on-current and first reset peak current after the forming process are crucial in obtaining a CRS-like curve. We demonstrate transient CRS-like characteristics with high nonlinearity under pulse response for practical applications. Finally, after finding the optimal conditions for high selectivity, the calculated read margin proves that a Pt/HfAlOx/TiN device with a CRS-like curve is most suitable for use in a high-density cross-point array. Our results suggest that the built-in selector properties in a Pt/HfAlOx/TiN single layer device offer considerable potential in terms of the simplicity of the processes involved in the cross-point structure.

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Section: Resultsmentioning

confidence: 99%

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Choi

Kim

2020

Coatings

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“…This is evidenced by the rise in the electrical conductivity to the order of 10 4 for 2% Mn 2+ doped CdSe over undoped one as shown in Figure 11(a) [17]. Here, the conduction mechanism is controlled by the electric field-assisted thermal ionization of trapped charge carriers in CdSe QDs as described in Poole-Frenkel effect as shown in Figure 11(b) [66]. The bandgap has no role in the conductivity and the observed colossal conductivity enhancement is solely due to the concentration of Mn 2+ dopant ions.…”

Section: Electrical and Memristor Property Of Mn 2+ Doped Cdse Qdsmentioning

confidence: 86%

Doping of Semiconductors at Nanoscale with Microwave Heating (Overview)

Sandhya¹,

Manamel²,

Das³

2021

Microwave Heating - Electromagnetic Fields Causing Thermal and Non-Thermal Effects

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Incorporation of dopants efficiently in semiconductors at the nanoscale is an open challenge and is also essential to tune the conductivity. Typically, heating is a necessary step during nanomaterials’ solution growth either as pristine or doped products. Usually, conventional heating induces the diffusion of dopant atoms into host nanocrystals towards the surface at the time of doped sample growth. However, the dielectric heating by microwave irradiation minimizes this dopant diffusion problem and accelerates precursors’ reaction, which certainly improves the doping yield and reduces processing costs. The microwave radiation provides rapid and homogeneous volumetric heating due to its high penetration depth, which is crucial for the uniform distribution of dopants inside nanometer-scale semiconducting materials. This chapter discusses the effective uses of microwave heating for high-quality nanomaterials synthesis in a solution where doping is necessary to tune the electronic and optoelectronic properties for various applications.

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“…There are many factors that go into device switching at each temperature for the SDC device. Some examples include the temperature dependence of the chemical reaction between Ag or Cu and the SnSe layer and induced reactions in the active layer; movement of mobile ions through a variable-stiffness glass network; constricted channel for ion motion (e.g., due to cold temperature volume contractions); and the typical DC conductivity mechanistic concerns (e.g., Fermi energy level and dominant electron conduction mechanism at each temperature [42,43,44]). It could also be reasoned that even programming a set of devices to a state value, and then subjecting the devices to a set of varying temperatures and measuring conductivity could also confound the mechanism analysis.…”

Section: Discussionmentioning

confidence: 99%

Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

Drake

Majumdar

et al. 2019

Micromachines

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Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if operated below 125 K. It is also observed that Cu reversibly diffuses into the active Ge2Se3 layer during normal device shelf-life, thus changing the state of a Cu-based memristor over time. This was not observed for the Ag-based SDC devices. The response of each device type to sinusoidal excitation is provided and shows that the Cu-based devices exhibit hysteresis lobe collapse at lower frequencies than the Ag-based devices. In addition, the pulsed response of the device types is presented.

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Electronic Conduction Mechanisms in Insulators

Cited by 45 publications

References 27 publications

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Doping of Semiconductors at Nanoscale with Microwave Heating (Overview)

Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

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