Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

Wang, H.L; Ning, Dezhi; Zhu, Hailin; Chen, F; Wang, H; Wang, X.D; Feng, Shipeng

doi:10.1016/s0022-0248(99)00441-8

Cited by 32 publications

(11 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The QD states could only be iden-tified by DLTS when the InAs insertion is well below 3 ML [16,17]. It is also worth mentioning that in successful attempts to produce luminescence devices based on InAs QDs, the dots are separated from the GaAs matrix by an InGaAs interlayer, which help reducing the mechanical stress [18,19].…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Instability of electrical characteristics of GaAs/InAs quantum dot structures

Dózsa

Horváth

Gombia³

et al. 2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

PACS 71.55.Eq, 73.21.LaWe report on GaAs samples containing an InAs quantum dot matrix grown from 3 monolayers of InAs. In this case, most of the mechanical stress relaxes by misfit dislocations. Capacitance measurements have been performed on macroscopic devices and, also, from a scanning microscope in which the capacitance is measured between the probe and sample surface. It was found that the electrical characteristics dramatically change during the capacitance measurements. This is explained by a degradation of the quantum dot layer which is attributed to the generation of point defects and/or dislocations. These results draw attention to the fact that, at the microscopic scale measurement, a small current may result in a large local current density which, in turn, degrades the device.

show abstract

Section: Discussionmentioning

confidence: 99%

“…First a 1 µm thick, ntype, GaAs buffer layer was grown by molecular beam epitaxy (MBE) at 580 °C. It was, typically, Sidoped to about 2x10 16 at.cm -3 . The InAs deposits were next grown by atomic layer MBE (AL-MBE) at 460° C, followed by a 0.4 µm GaAs cap layer (also grown by AL-MBE but, now, at 400°C).…”

Section: Samples Preparationmentioning

confidence: 99%

Instability of electrical characteristics of GaAs/InAs quantum dot structures

Dózsa

Horváth

Gombia³

et al. 2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

show abstract

“…InAs QDs have received special interest because of their wide usage in various applications in optoelectronics [8][9][10]. Debye temperature is known to be related to the distance that allows minimum phonon energy to exist.…”

Section: Introductionmentioning

confidence: 99%

Analysis of In/Ga Inter-Diffusion Effect on the Thermodynamical Properties of InAs Quantum Dot

Abdellatif

Song

Lee

et al. 2016

Applied Science and Convergence Technology

View full text Add to dashboard Cite

Debye temperature is an important thermodynamical factor in quantum dots (QDs); it can be used to determine the degree of homogeneity of a QD structure as well as to study the interdiffusion mechanism during growth. Direct estimation of the Debye temperature can be obtained using the Varshni relation. The Varshni relation is an empirical formula that can interpret the change of emission energy with temperature as a result of phonon interaction. On the other hand, phonons energy can be calculated using the Fan Expression. The Fan expression and Varshni relation are considered equivalent at a temperature higher than Debye temperature for InAs quantum dot. We investigated InAs quantum dot optically, the photoluminescence spectra and peak position dependency on temperature has been discussed. We applied a mathematical treatment using Fan expression, and the Varshni relation to obtain the Debye temperature and the phonon energy for InAs quantum dots sample. Debye temperature increase about double compared to bulk crystal. We concluded that the In/Ga interdiffusion during growth played a major role in altering the quantum dot thermodynamical parameters.

show abstract

“…Because of the new abilities to accumulate the carriers of a charge in the QDs which could built into various semiconductor heterojunctions such structures are capable to show the certain physical phenomenon connected with charge of QDs and reveal some specific features in capacitance-voltage (C-V) dependences [1][2][3][4][5][6] . Authors of main part of papers present experimental results of the investigation of the C-V dependences for structures with QDs layers and determination such parameters of QDs, as concentration, energetic position and capture cross-section.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Negative Differential Capacitance-Voltage Dependences of Shottky Diode Structures With Gaas/Inas QDS

Lin

Lee

Ilchenko

et al. 2014

SEMST

View full text Add to dashboard Cite

Ñapacitance-voltage investigations were made on Schottky diodes with embedded GaAs/InAs quantum dots and quantum wells. An effect of the negative differential capacitance(NDC) was clear observed. Numerical modeling of the C-V dependences was carried out with temperature and concentration of QDs as parameters. Energy structure of the investigated samples was examined by deep level transient spectroscopy(DLTS). It was shown that the proposed model is in good agreement with experiment and describes well the NDC effect.

show abstract

Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

Cited by 32 publications

References 17 publications

Instability of electrical characteristics of GaAs/InAs quantum dot structures

Instability of electrical characteristics of GaAs/InAs quantum dot structures

Analysis of In/Ga Inter-Diffusion Effect on the Thermodynamical Properties of InAs Quantum Dot

Investigation of Negative Differential Capacitance-Voltage Dependences of Shottky Diode Structures With Gaas/Inas QDS

Contact Info

Product

Resources

About