2019
DOI: 10.1016/j.chemphys.2019.110414
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Electronic band structure, thermodynamics and optical characteristics of BeO1−A (A = S, Se, Te) alloys: Insights from ab initio study

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Cited by 47 publications
(9 citation statements)
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“…The optical absorption coefficient α(ω) is obtained from the dielectric components using the following formula 65,66 :…”
Section: Physical Chemistry Chemical Physics Accepted Manuscriptmentioning
confidence: 99%
“…The optical absorption coefficient α(ω) is obtained from the dielectric components using the following formula 65,66 :…”
Section: Physical Chemistry Chemical Physics Accepted Manuscriptmentioning
confidence: 99%
“…On the other hand, two dimensional (2D) materials, have attracted considerable attention due to their exceptional properties such as tunable optoelectronic properties, good mechanical properties, superior electron carrier mobility, good gas sensing, high surface-volume ratio, etc. [29][30][31][32][33][34][35][36] Meanwhile, the thermoelectric efficiency, electrochemical and photoresponse properties of a number of 2D materials were estimated first theoretically. 37 Among these 2D materials, Bi 2 X 3 (X= S, Se, Te) monolayers show interesting properties and thus can be used in spintronic devices, 38 construction of high-performance thermoelectric devices, 39 supercapacitors, 40 and nanoscale photodetectors.…”
Section: Introductionmentioning
confidence: 99%
“…Monolayer transition metal dichalcogenides (TMDs) have attracted great interest due to their excellent electrical and optical properties [1][2][3][4][5][6][7][8]: because of their semiconducting nature, TMDs allow to overcome the shortcomings of zero-bandgap graphene, showing attractive potential for constructing digital circuits [9,10] and next generation light-emitting devices [11,12]. In addition to the large range of available bandgaps of pristine S-, Se-and Te-based TMDs [13][14][15][16][17], the facile intermixing in different alloys [18][19][20][21][22] and stacking in heterostructures [23][24][25] give way to virtually infinite possibilities of electronic and optical properties engineering. Moreover, the integration of large-area semiconducting TMDs with existing complementary metal oxide silicon (CMOS) platforms promises fast advances in electronic and photonic technologies [26][27][28][29].…”
Section: Introductionmentioning
confidence: 99%