Electronic and Thermal Properties of Si-doped InSe Layered Chalcogenides

Yoo, Joonyeon; Kim, Ji-Il; Cho, Hyun-Jun; Choo, Sung-sil; Kim, Sang Il; Lee, Kimoon; Shin, Weon Ho; Kim, Hyun-Sik; Roh, Jong Wook

doi:10.3938/jkps.72.775

Cited by 12 publications

(6 citation statements)

References 15 publications

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“…The value of σ increased gradually with an increase in S content, over the entire temperature range. The relationship between σ and T can be expressed by the Arrhenius relationship [23]:…”

Section: Resultsmentioning

confidence: 99%

Phase Formation Behavior and Thermoelectric Transport Properties of S-Doped FeSe2−xSx Polycrystalline Alloys

et al. 2022

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Some transition-metal dichalcogenides have been actively studied recently owing to their potential for use as thermoelectric materials due to their superior electronic transport properties. Iron-based chalcogenides, FeTe2, FeSe2 and FeS2, are narrow bandgap (~1 eV) semiconductors that could be considered as cost-effective thermoelectric materials. Herein, the thermoelectric and electrical transport properties FeSe2–FeS2 system are investigated. A series of polycrystalline samples of the nominal composition of FeSe2−xSx (x = 0, 0.2, 0.4, 0.6, and 0.8) samples are synthesized by a conventional solid-state reaction. A single orthorhombic phase of FeSe2 is successfully synthesized for x = 0, 0.2, and 0.4, while secondary phases (Fe7S8 or FeS2) are identified as well for x = 0.6 and 0.8. The lattice parameters gradually decrease gradually with S content increase to x = 0.6, suggesting that S atoms are successfully substituted at the Se sites in the FeSe2 orthorhombic crystal structure. The electrical conductivity increases gradually with the S content, whereas the positive Seebeck coefficient decreases gradually with the S content at 300 K. The maximum power factor of 0.55 mW/mK2 at 600 K was seen for x = 0.2, which is a 10% increase compared to the pristine FeSe2 sample. Interestingly, the total thermal conductivity at 300 K of 7.96 W/mK (x = 0) decreases gradually and significantly to 2.58 W/mK for x = 0.6 owing to the point-defect phonon scattering by the partial substitution of S atoms at the Se site. As a result, a maximum thermoelectric figure of merit of 0.079 is obtained for the FeSe1.8S0.2 (x = 0.2) sample at 600 K, which is 18% higher than that of the pristine FeSe2 sample.

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Section: Resultsmentioning

confidence: 99%

Phase Formation Behavior and Thermoelectric Transport Properties of S-Doped FeSe2−xSx Polycrystalline Alloys

et al. 2022

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“…The relatively large improvement of the thermoelectric properties of InSe 0.93 Te 0.07 is related to the modification of E g , which increases the carrier concentration, in addition to a relatively large decrease of κ. Incorporating an effective cation dopant, such as Sn [7,8] or Si [9][10][11], could enable further enhancement of the carrier transport properties by increasing carrier concentration.…”

Section: Resultsmentioning

confidence: 99%

“…This would further enhance the doping efficiency of known extrinsic dopants such as Sn [7,8] or Si [9][10][11], and a further increase of carrier concentration could be anticipated. In addition, the substitution of S or Te atoms in the Se site would reduce the κ due to an enhanced phonon scattering from those point defects.…”

Section: Introductionmentioning

confidence: 99%

Electrical and thermal transport properties of S- and Te-doped InSe alloys

Kim

2019

J. Phys. D: Appl. Phys.

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Metal chalcogenide materials, including indium selenide (InSe), have attracted attention as potential thermoelectric materials due to their intrinsically low thermal conductivity, which is due to their layered structure with weak atomic bonding. However, their low electrical conductivity should be increased for application as thermoelectric materials. In this study, we examined the electrical and thermal transport properties of 7% S-or Te-doped InSe polycrystalline alloys (InSe 0.93 S 0.07 and InSe 0.93 Te 0.07 ). These anion substitutions increased the electrical conductivity of InSe, while the enhancement was larger for the Te-doped InSe with a smaller bandgap. The negative Seebeck coefficient did not change significantly upon doping, resulting in enhancement of the power factor. Doping caused a relatively large reduction of thermal conductivity due to additional point defect phonon scattering. Consequently, the thermoelectric figure of merit (zT) increased by 62% and 230% to a maximum of 0.13 and 0.28 at 735 K for InSe 0.93 S 0.07 and InSe 0.93 Te 0.07 , respectively, which offers the possibility of InSe-based thermoelectric materials. Cation doping could increase the zT of S/Te-doped InSe further.

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“…The in-plane and out-of-plane thermal conductivity κ of bulk γ-InSe were measured as 10.42 and 1.74 W m −1 K −1 at T = 300 K, respectively [140]. Si doping can decrease the average RT κ to a very small value of 1.6 W m −1 K −1 [141]. The κ of InSe 0.95 S 0.05 is ∼0.6 W m −1 K −1 at 723 K [142].…”

Section: Experimental Work On the Thermal Conductivity Of 2d Insementioning

confidence: 99%

Carrier and phonon transport in 2D InSe and its Janus structures

Wan¹,

Guo²,

Ge³

et al. 2023

J. Phys.: Condens. Matter

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Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation, the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.

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Electronic and Thermal Properties of Si-doped InSe Layered Chalcogenides

Cited by 12 publications

References 15 publications

Phase Formation Behavior and Thermoelectric Transport Properties of S-Doped FeSe2−xSx Polycrystalline Alloys

Phase Formation Behavior and Thermoelectric Transport Properties of S-Doped FeSe2−xSx Polycrystalline Alloys

Electrical and thermal transport properties of S- and Te-doped InSe alloys

Carrier and phonon transport in 2D InSe and its Janus structures

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