2023
DOI: 10.1088/1361-648x/acb2a5
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Carrier and phonon transport in 2D InSe and its Janus structures

Abstract: Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mob… Show more

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Cited by 6 publications
(2 citation statements)
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“…Group-III monochalcogenide compounds (MX; where M = Ga, In, X = S, Se, Te) have gained favor in the field of 2D semiconducting materials due to their excellent fundamental properties, including high charge carrier mobility, large elastic deformation capability, tunable interlayer bandgaps, and rich polytypes. 44,45 Each monolayer of MX contains four atomic layers connected by covalent bonds, X-M-M-X, and these monolayers are held together by vdW forces. We use InX (X = S, Se, Te) with space group P% 6m2 (#187) as the initial structure, which is stacked in the sequence of X-In-In-X.…”
Section: Resultsmentioning
confidence: 99%
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“…Group-III monochalcogenide compounds (MX; where M = Ga, In, X = S, Se, Te) have gained favor in the field of 2D semiconducting materials due to their excellent fundamental properties, including high charge carrier mobility, large elastic deformation capability, tunable interlayer bandgaps, and rich polytypes. 44,45 Each monolayer of MX contains four atomic layers connected by covalent bonds, X-M-M-X, and these monolayers are held together by vdW forces. We use InX (X = S, Se, Te) with space group P% 6m2 (#187) as the initial structure, which is stacked in the sequence of X-In-In-X.…”
Section: Resultsmentioning
confidence: 99%
“…Extensive attention has been drawn to these materials because they are semiconductors with high carrier mobility (10 3 cm 2 V À1 Ás À1 ), 42,43 high photoresponsivity, fast response time, p-type electronic properties and some other unique electronic properties. [44][45][46] However, there is still limited investigation on this family in the field of 2D magnetism.…”
Section: Introductionmentioning
confidence: 99%