“…Group-III monochalcogenide compounds (MX; where M = Ga, In, X = S, Se, Te) have gained favor in the field of 2D semiconducting materials due to their excellent fundamental properties, including high charge carrier mobility, large elastic deformation capability, tunable interlayer bandgaps, and rich polytypes. 44,45 Each monolayer of MX contains four atomic layers connected by covalent bonds, X-M-M-X, and these monolayers are held together by vdW forces. We use InX (X = S, Se, Te) with space group P% 6m2 (#187) as the initial structure, which is stacked in the sequence of X-In-In-X.…”