Electronic and surface properties of H-terminated diamond surface affected by NO2 gas

Kubovič, M.; Kasu, Makoto; Kageshima, Hiroyuki; Maeda, Fumihiko

doi:10.1016/j.diamond.2010.02.021

Cited by 51 publications

(31 citation statements)

References 23 publications

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“…The gases that could increase the H 3 O + concentration ion after dissolution into water could surely increase the surface conductivity of the hydrogenated diamond film. This may be the root explanation for the high surface conductivity of hydrogenated diamond films when exposed to gases such as NO 2 and O 3 [22,23], as well as the immutability of the high surface resistance of the hydrogenated diamond film when exposed to gases like CO 2 [24]. Thus, based on the calculation results in this work, sensors sensitive to various gases that increase H 3 O + ion concentration after dissolving into water could be developed.…”

Section: Research Articlementioning

confidence: 82%

Geometries and electronic structures of the hydrogenated diamond (100) surface upon exposure to active ions: A first principles study

Liu

Chen

et al. 2015

Front. Phys.

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To elucidate the effects of physisorbed active ions on the geometries and electronic structures of hydrogenated diamond films, models of HCO − 3 , H 3 O + , and OH − ions physisorbed on hydrogenated diamond (100) surfaces were constructed. Density functional theory was used to calculate the geometries, adsorption energies, and partial density of states. The results showed that the geometries of the hydrogenated diamond (100) surfaces all changed to different degrees after ion adsorption. Among them, the H 3 O + ion affected the geometry of the hydrogenated diamond (100) surfaces the most. This is well consistent with the results of the calculated adsorption energies, which indicated that a strong electrostatic attraction occurs between the hydrogenated diamond (100) surface and H 3 O + ions. In addition, electrons transfer significantly from the hydrogenated diamond (100) surface to the adsorbed H 3 O + ion, which induces a downward shift in the HOMO and LUMO energy levels of the H 3 O + ion. However, for active ions like OH − and HCO − 3 , no dramatic change appears for the electronic structures of the adsorbed ions.

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Section: Research Articlementioning

confidence: 82%

Geometries and electronic structures of the hydrogenated diamond (100) surface upon exposure to active ions: A first principles study

Liu

Chen

et al. 2015

Front. Phys.

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“…Figure b shows the core‐level Al 2 p spectrum at the interface. Figure c illustrates how the C 1 s spectrum was decomposed into four peaks corresponding to C sp 3 (284.19 eV), CH (285.1 eV), CO (286.9 eV), and OCO (289 eV) . No S 2 p peak at the interface was detected as depicted in Figure d.…”

Section: Resultsmentioning

confidence: 98%

“…Figure c shows the C 1s photoemission spectrum at the interface, which originates from the underlying diamond surface. The line shape of the C 1s spectrum was fitted by four peaks, which correspond to C sp 3 (284.21 eV), CH (285.1 eV), CO (286.9 eV), and OCO (289 eV) . Figure d illustrates the N 1s core‐level photoemission spectrum at the H‐diamond interface with a 0.15 nm‐thick Al 2 O 3 layer.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 2c illustrates how the C 1s spectrum was decomposed into four peaks corresponding to C sp 3 (284.19 eV), C─H (285.1 eV), C5 5O (286.9 eV), and O5 5C5 5O (289 eV). [31,32] No S 2p peak at the interface was detected as depicted in Figure 2d. This suggests that the absorbed SO 2 molecules decomposed and that the S 2p component has desorbed.…”

Section: Al 2 O 3 /So 2 /H-diamond Heterointerfacementioning

confidence: 97%

“…The line shape of the C 1s spectrum was fitted by four peaks, which correspond to C sp 3 (284.21 eV), C─H (285.1 eV), C5 5O (286.9 eV), and O5 5C5 5O (289 eV). [31,32] Figure 1d illustrates the N 1s core-level photoemission spectrum at the H-diamond interface with a 0.15 nm-thick Al 2 O 3 layer. As the sample was exposed to NO gas before deposition of the Al 2 O 3 layer, the photoemission spectrum was taken across binding energy ranges from 392 to 408 eV to confirm the existence of the nitrogen.…”

Section: Synchrotron Xps Measurementsmentioning

confidence: 99%

See 2 more Smart Citations

Band Alignment of Al₂O₃ Layer Deposited NO and SO₂ Exposed (001) H‐Diamond Heterointerfaces Studied by Synchrotron Radiation X‐Ray Photoelectron Spectroscopy

Saha

Takahashi

Imamura

et al. 2018

Physica Status Solidi (a)

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The interfacial energy band alignment of the interface between H‐terminated diamond, exposed to either NO or SO2, and an Al2O3 layer is studied using synchrotron radiation X‐ray photoelectron spectroscopy (XPS) and X‐ray absorption near‐edge structure (XANES) measurements. From the results, type II band alignment is determined for both the Al2O3/NO/H‐diamond and the Al2O3/SO2/H‐diamond heterointerfaces. The valence band offsets are determined to be 3.7 eV for the Al2O3/NO/H‐diamond heterointerface and 3.5 ± 0.1 eV for the Al2O3/SO2/H‐diamond heterointerface. XPS spectra indicate that the NO and SO2 decompose on the H‐diamond surface, and XANES measurements demonstrate the formation of oxygen related interface states.

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Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

Zhang

Liu

et al. 2018

Physica Rapid Research Ltrs

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The two-dimensional hole gas (2DHG) induced at H-terminated diamond surface provides the most widely used room-temperature surface electrical conductance of diamond semiconductors. Temperature and hole sheet density dependences of the mobility of 2DHG in H-terminated diamond are investigated for the first time considering four scattering mechanisms: surface impurity (SI) scattering, acoustic deformation potential (AC) scattering, nonpolar optical phonon (NOP) scattering, and surface/interface roughness (SFR/IFR) scattering. The calculation results are then compared with the experimental data, where the best agreement is obtained with the effective coupling constant of the non-polar optical phonon D nop and the correlation length L with values of of 1.2 Â 10 10 eV cm À1 and 2 nm, respectively. The theoretical data show that the SI scattering dominates the 2DHG mobility at a relatively large range of the temperature and the hole density due to the proximity of the surface impurities to the 2DHG, while the NOP scattering becomes important as the temperature increases further.

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Electronic and surface properties of H-terminated diamond surface affected by NO2 gas

Cited by 51 publications

References 23 publications

Geometries and electronic structures of the hydrogenated diamond (100) surface upon exposure to active ions: A first principles study

Geometries and electronic structures of the hydrogenated diamond (100) surface upon exposure to active ions: A first principles study

Band Alignment of Al₂O₃ Layer Deposited NO and SO₂ Exposed (001) H‐Diamond Heterointerfaces Studied by Synchrotron Radiation X‐Ray Photoelectron Spectroscopy

Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

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Electronic and surface properties of H-terminated diamond surface affected by NO2 gas

Cited by 51 publications

References 23 publications

Geometries and electronic structures of the hydrogenated diamond (100) surface upon exposure to active ions: A first principles study

Geometries and electronic structures of the hydrogenated diamond (100) surface upon exposure to active ions: A first principles study

Band Alignment of Al2O3 Layer Deposited NO and SO2 Exposed (001) H‐Diamond Heterointerfaces Studied by Synchrotron Radiation X‐Ray Photoelectron Spectroscopy

Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

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Band Alignment of Al₂O₃ Layer Deposited NO and SO₂ Exposed (001) H‐Diamond Heterointerfaces Studied by Synchrotron Radiation X‐Ray Photoelectron Spectroscopy