2013
DOI: 10.1063/1.4812478
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Electronic and structural properties of carbon nanotubes modulated by external strain

Abstract: Responses of work functions to uniaxial strain on infinite-length single-walled armchair (AC) [(2, 2) and (7, 7)] and zigzag (ZZ) [(3, 0) and (12, 0)] carbon nanotubes (CNTs) are investigated based on density functional theory. It is found that as strain increases, the work function of ZZ (3, 0) tubes decreases monotonically from 6.2 to 5.7 eV, whereas that of AC (2, 2) tubes varies between 4.6 and 5.3 eV in a somewhat complicated manner. For ZZ (12, 0) and AC (7, 7) tubes with large diameters, the work functi… Show more

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Cited by 7 publications
(3 citation statements)
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References 35 publications
(41 reference statements)
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“…1a we show the calculated band structure of the perfect CNT (7,7). It qualitatively coincides with the band structure given in the paper [3]. In the vicinity of the Fermi level at ∼2 eV DOS is nonzero and almost constant.…”
Section: Resultssupporting
confidence: 72%
“…1a we show the calculated band structure of the perfect CNT (7,7). It qualitatively coincides with the band structure given in the paper [3]. In the vicinity of the Fermi level at ∼2 eV DOS is nonzero and almost constant.…”
Section: Resultssupporting
confidence: 72%
“…Recently, there are extensive concerns on tuning electronic or transport properties via strains for ZnO, carbon nanotube, graphene, MoS2, etc. . In the case of ZnO, the transport properties of ZnO nanowires (), ZnO nanotube (), and bulk ZnO () coupled with metal electrodes, have been widely studied in the recent years.…”
Section: Introductionmentioning
confidence: 99%
“…One avenue that has been explored to alter the intrinsic properties of nanotubes is the introduction of strain. The effects of strain on the elastic, structural, and electronic properties of carbon nanotubesincluding band gap and electron conductance-have been extensively studied [50][51][52][53][54][55][56]. Many uses have been suggested for strained nanotubes including strain sensors and field-effect transistors [57,58].…”
Section: Introductionmentioning
confidence: 99%