Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation

Silly, Mathieu G.; D’Angelo, M.; Besson, Adrien; Dappe, Yannick J.; Kubsky, S.; Li, G.; Nicolas, François; Pierucci, Debora; Thomasset, Muriel

doi:10.1016/j.carbon.2014.04.033

Cited by 29 publications

(21 citation statements)

References 56 publications

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“…While the observed magnitude of the shift for the PbSi bonds formed in the graphene–SiC interface is larger than those found on the semiconductor surface, as reported in ref. it agrees well with the value of 1.2 eV reported for the Si intercalated SLG on SiC substrate . On the basis of these results, we conclude that after the Pb intercalation process, the Pb atoms could pass through the graphene and buffer layer and form covalent bonds with the Si atoms of the SiC substrate, resulting in replacement of some of the Si dangling bonds with PbSi chemisorption bonds.…”

Section: Resultssupporting

confidence: 91%

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Yurtsever

Onoda

Iimori

et al. 2016

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The effects of Pb intercalation on the structural and electronic properties of epitaxial single-layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X-ray photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moiré superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π-bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of PbSi chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole-doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene-capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics.

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Section: Resultssupporting

confidence: 91%

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Yurtsever

Onoda

Iimori

et al. 2016

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“…Additionally, a shift of approximately 0.7-2.0eV in bulk SiC C 1s and Si 2p peak positions is often observed in the XPS spectrum as a result of intercalation. 9,15,18,[27][28][29][30][31][32][33][34][35] This shift indicates a change in the charge transfer between SiC and EG caused by the presence of an intercalant layer.…”

Section: Epitaxial Graphene On Silicon Carbide: Growth and Characterimentioning

confidence: 99%

Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials

et al. 2019

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Intercalation of atomic species through epitaxial graphene layers began only a few years following its initial report in 2004. 1 The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties not found in nature. This suggests that a shift in the focus of epitaxial graphene intercalation studies may lead to fruitful exploration of many new forms of traditionally 3D materials. In the following forwardlooking review, we summarize the primary techniques used to achieve and characterize EG intercalation, and introduce a new, facile approach to readily achieve metal intercalation at the graphene/silicon carbide interface. We show that simple thermal evaporation-based methods can effectively replace complicated synthesis techniques to realize large-scale intercalation of nonrefractory metals. We also show that these methods can be extended to the formation of compound materials based on intercalation. Two-dimensional (2D) silver (2D-Ag) and large-scale 2D gallium nitride (2D-GaNx) are used to demonstrate these approaches.

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“…[42][43][44] On the Si-face, it has been shown that nanostructures can be created by the process. 44 The difficulties in the mechanism analysis arise from the complexity of the samples. Some previous studies on nanoridges were done using few layers graphene, and the authors suggested that layer effects must be put in the consideration.…”

Section: Introductionmentioning

confidence: 99%

Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy

Vantasin

Tanaka

Uemura

et al. 2015

Phys. Chem. Chem. Phys.

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Single-layer graphene microislands with smooth edges and no visible grain boundary were epitaxially grown on the C-face of 4H-SiC and then characterized at the nanoscale using tip-enhanced Raman spectroscopy (TERS). Although these graphene islands appear highly homogeneous in micro-Raman imaging, TERS reveals the nanoscale strain variation caused by ridge nanostructures. A G' band position shift up to 9 cm(-1) and a band broadening up to 30 cm(-1) are found in TERS spectra obtained from nanoridges, which is explained by the compressive strain relaxation mechanism. The small size and refined nature of the graphene islands help in minimizing the inhomogeneity caused by macroscale factors, and allow a comparative discussion of proposed mechanisms of nanoridge formation.

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Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation

Cited by 29 publications

References 56 publications

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials

Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy

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