Intercalation of atomic species through epitaxial graphene layers began only a few years following its initial report in 2004. 1 The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties not found in nature. This suggests that a shift in the focus of epitaxial graphene intercalation studies may lead to fruitful exploration of many new forms of traditionally 3D materials. In the following forwardlooking review, we summarize the primary techniques used to achieve and characterize EG intercalation, and introduce a new, facile approach to readily achieve metal intercalation at the graphene/silicon carbide interface. We show that simple thermal evaporation-based methods can effectively replace complicated synthesis techniques to realize large-scale intercalation of nonrefractory metals. We also show that these methods can be extended to the formation of compound materials based on intercalation. Two-dimensional (2D) silver (2D-Ag) and large-scale 2D gallium nitride (2D-GaNx) are used to demonstrate these approaches.
We demonstrate a high-yield fabrication of non-local spin valve devices with roomtemperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 µm in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO 2 /Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene.However, by studying the carrier density dependence beyond n ~ 5 x 10 12 cm -2 , via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spinrelaxation is driven by spin-orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO 2 /Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30-µm long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications.
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