Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory

Hjort, Martin; Lehmann, Sebastian; Knutsson, Johan; Zakharov, Alexei; Du, Yaojun A.; Sakong, Sung; Timm, Rainer; Nylund, Gustav; Lundgren, Edvin; Kratzer, Peter; Dick, Kimberly A.; Mikkelsen, Anders

doi:10.1021/nn504795v

Cited by 79 publications

(125 citation statements)

References 57 publications

(135 reference statements)

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“…Recent results from surface analysis of hydrogencleaned InAs nanowires show no detectable polarization charges at the interface or offset in the conduction band; the latter was explained by the intrinsic n-type characteristic of InAs masking the fundamental offset. 11 In addition, the authors in Ref. 11 point out the importance of surface states and surface oxides for the band alignment.…”

Section: Introductionmentioning

confidence: 99%

Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

et al. 2016

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We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.

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Section: Introductionmentioning

confidence: 99%

Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

et al. 2016

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“…20 A cleaning process has been performed in the ultrahigh vacuum (UHV) chamber of the XPS setup by exposing the samples to atomic hydrogen at a pressure of 5 Â 10 À6 mbar and a sample temperature of 400 C, in order to get rid of the native oxides and additional contamination. Although this procedure was successfully used to remove the native oxides from homogeneous InAs NWs, 8 in the present case, the temperature was too low for a complete removal of native oxides from GaAs NWs. 6 Unfortunately, a higher temperature could not be used in order to avoid InAs surface degradation and the formation of In droplets.…”

Section: Methodsmentioning

confidence: 80%

“…5. The electronic properties of such high-mobility devices can be correlated with structural properties [6][7][8] and with the quality of the heterointerface. A better understanding of such correlations requires a detailed analysis of the effective band confinement of these structures, using highly surface-and interfacesensitive techniques.…”

Section: Introductionmentioning

confidence: 99%

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Khanbabaee

Bussone

Knutsson

et al. 2016

Journal of Applied Physics

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Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the Asoxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about À0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. Published by AIP Publishing. [http://dx

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“…As to the crystal structure of the 2-D InAs nanosheets, the nanosheets are composed of a mixture of wurtzite (WZ) and zinc-blende (ZB) segments (Fig. 2j,r,k,s) as reported in most III-V 1-D nanowires and 2-D nanomembranes grown with a bottom-up manner 20,16 . These effects might have an impact on the nanosheets' optical and electrical properties and may pose problems in future nano-electronic devices due to electron scattering at stacking faults or twin planes 21, 22 .…”

Section: Thickness-modulated and Phase Purity Of 2-d Inas Nanosheetsmentioning

confidence: 99%

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Pan

Zhao

2019

2019 Compound Semiconductor Week (CSW)

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Low-dimensional narrow bandgap III-V semiconductors are key building blocks for the next generation of high-performance nano-electronics, nano-photonics and quantum devices. To realize these various applications, it requires an efficient methodology that enables the material dimensional control during the synthesis process and the mass production of these materials with perfect crystallinity, reproducibility, low cost and outstanding optoelectronic properties. However, despite advances in one-and two-dimensional narrow bandgap III-V semiconductors synthesis, the progress towards reliable methods that can satisfy all of these requirements has been limited. Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be obtained directly from one-dimensional InAs nanowires by silver-indium alloy segregation, which is much easier than all previously reported method, such as traditional buffering technique and select area epitaxial growth. Detailed transmission electron microscopy investigations provide a solid evidence that the catalyst alloy segregation is the origination of the InAs dimensional transformation from one-dimensional nanowires to two-dimensional nanosheets, and even to three-dimensional complex crosses. Using this method, we find that the wafer-scale free-standing InAs nanosheets can be grown on various substrates including Si, MgO, sapphire and GaAs etc. The InAs nanosheets grown at high temperature are pure phase single crystals and have a high electron mobility and a long time-resolved THz kinetics lifetime. Our work will open up a conceptually new and general technology route toward the effective controlling the dimension of the low-dimensional III-V semiconductors. It may also enable the low-cost fabrication of free-standing nanosheet-based devices on an industrial scale.

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Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory

Cited by 79 publications

References 57 publications

Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

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