Electronic and optical properties of bilayer blue phosphorus

Moğulkoç, Y.; Modarresi, M.; Moğulkoç, A.; Çiftçi, Y.Ö.

doi:10.1016/j.commatsci.2016.07.015

Cited by 56 publications

(33 citation statements)

References 56 publications

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“…The unit cell is highlighted by the dashed blue rhombus and the basis vectors ⃗ 1 and ⃗ 2 are along the zigzag edges with the lattice constant a1 = a2 = 0.328 nm [17]. The buckling of blueP defined as distance between the two P atomic layers is d ~ 0.13 nm [28,29]. Figure 1b shows a typical reflected high energy electron diffraction (RHEED) pattern of an epitaxial P layer on Au(111), where the diffraction streaks of Au(111)-1  1 and P are clearly resolved as marked by the red and blue arrows, respectively.…”

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confidence: 99%

One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy

Zhang

Tian

et al. 2017

Phys. Rev. Materials

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Single layer (SL) phosphorus (phosphorene) has drawn considerable research attention recently as a two-dimensional (2D) material for application promises. It is a semiconductor showing superior transport and optical properties. Few-layer or SL black phosphorus has been successfully isolated by exfoliation from bulk crystals and extensively studied thereof for its electronic and optical properties. Blue phosphorus (blueP), an allotrope of black phosphorus where atoms are arranged in a more flat atomic configuration, has been recently suggested by theory to exist in the SL form on some substrates. In this work, we report the formation of a blueP-like epilayer on Au(111) by molecular-beam epitaxy. In particular, we uncover by scanning tunneling microscopy (STM) one-dimensional (1D) atomic chains at low coverage, which develop into more compact islands or patches of 3 3 30 ()  R structure with increasing coverage before blueP-like islands nucleate and grow. We also note an interesting growth characteristic where the 3 3 30 ()  R surface at intermediate coverage tends to phase-separate into locally low-coverage 1D chain and high-coverage blueP-like structures, respectively. This experiment thus not only lends a support of the recently proposed half-layer by half-layer (HLBHL) growth mechanism but also reveals the kinetic details of blueP growth processes. In this Letter, we report the growth of phosphorus by MBE. In particular, we reveal the HLBHL growth characteristics of P on Au(111), conforming to the recent theoretical prediction [19]. By using scanning tunneling microscopy (STM), we further uncover a new one-dimensional (1D) chain structure, which evolves into the 3 3 30 ()  R compact islands or patches with increasing coverage before blueP-like islands nucleate and grow. The latter manifest by the (5  5) reconstruction, similar to that reported earlier [18,20]. More interestingly, we discover that the 3 3 30 ()  R phase at intermediate coverage gives way to the "phase-separated" 3 surfaces consisting of locally low-coverage 1D chains and high-coverage blueP-like islands coexisted side-by-side on the same surface. This finding enriches our understandings of the variant HLBHL growth mechanism and allows one to design various phosphorene architectures by epitaxy for different purposes.Deposition of P and subsequent STM examinations were carried out in a Unisoku UHV system consisted of a sample preparation chamber and an insert of STM facility operated at 77 K. The base pressure was 1 × 10 −10 Torr. Crystalline Au(111) was cleaned by Ar + bombardment (1.0 keV, 5 × 10 −6 Torr) followed by annealing at ~ 600 °C. Phosphorus vapor was generated from thermal decomposition of InP in a standard Knudsen cell operated at ~ 470 °C. The temperature of the substrate was 210 -230 °C. After depositing for a preset period, the sample was immediately transferred to the cooling stage of the STM for surface examinations. Electrochemically etched tungsten tips were used, which were conditioned by heating and/or silve...

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confidence: 99%

One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy

Zhang

Tian

et al. 2017

Phys. Rev. Materials

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“…The method of model Hamiltonians is an alternative approach to address the problem of the electronic structure, which is less transferable, but more efficient and flexible. Among 2D materials, several tight-binding (TB) models have been proved to capture the relevant electronic states in graphene [19,20] and its derivatives [21], transition metal dichalcogenides [22][23][24][25] and different phases of phosphorus [26][27][28][29], while singlelayer antimony is still missing from the list.…”

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Electronic properties of single-layer antimony: Tight-binding model, spin-orbit coupling, and the strength of effective Coulomb interactions

Руденко¹,

Katsnelson²,

Roldán³

2017

Phys. Rev. B

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The electronic properties of single-layer antimony are studied by a combination of first-principles and tightbinding methods. The band structure obtained from relativistic density functional theory is used to derive an analytic tight-binding model that offers an efficient and accurate description of single-particle electronic states in a wide spectral region up to the mid-UV. The strong (λ = 0.34 eV) intra-atomic spin-orbit interaction plays a fundamental role in the band structure, leading to splitting of the valence band edge and to a significant reduction of the effective mass of the hole carriers. To obtain an effective many-body model of two-dimensional Sb we calculate the screened Coulomb interaction and provide numerical values for the on-siteV 00 (Hubbard) and intersiteV ij interactions. We find that the screening effects originate predominantly from the 5p states, and are thus fully captured within the proposed tight-binding model. The leading kinetic and Coulomb energies are shown to be comparable in magnitude, |t 01 |/(V 00 −V 01 ) ∼ 1.6, which suggests a strongly correlated character of 5p electrons in Sb. The results presented here provide an essential step toward the understanding and rational description of a variety of electronic properties of this two-dimensional material.

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“…By applying an external electric field and intentional doping, various Shottky barriers of GSJ can be achieved [7,8]. Furthermore, that GSJ can also integrate to other 2D semiconductors to form different heterojunctions such as graphene-hBN [9,10], graphene-MoS 2 and also graphene-black phosphorus [11][12][13][14].…”

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confidence: 99%

Negative differential resistance effect of blue phosphorene-graphene heterostructure device

Zhu

et al. 2020

J. Phys. Commun.

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We report on the electrical transport properties of new graphene/blue phosphorene heterostructure devices by density functional theory (DFT) within the non-equilibrium Green's function (NEGF) approach. From the results, it is found that the devices with different length of contacts layers show semiconducting nature. The integrated contacted length of graphene/blue phosphorene two-layer device shows the best conductivity under a bias voltage. The negative differential resistance effect (NDR) is also found in the current-voltage curve of all the graphene/blue phosphorene devices. Transport characteristics can be explained by the eigenvalues of self-consistent Hamiltonian (MPSH). The results show that the device is fabricated from graphene/blue phosphorous and has good electrical conductivity. These interesting features will be useful for future electronic products.

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Electronic and optical properties of bilayer blue phosphorus

Cited by 56 publications

References 56 publications

One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy

One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy

Electronic properties of single-layer antimony: Tight-binding model, spin-orbit coupling, and the strength of effective Coulomb interactions

Negative differential resistance effect of blue phosphorene-graphene heterostructure device

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