Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms

Kutlu, E.; Narin, P.; Li̇şesi̇vdi̇n, S. B.; Özbay, Ekmel

doi:10.1080/14786435.2017.1396375

Cited by 22 publications

(8 citation statements)

References 32 publications

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“…The width of the space-charge layer can be estimated as L ∼ √ ε s k B T/2πe 2 n i [74]. Taking ε s ∼ 5ε 0 as the static permittivity of BP [76] and using the intrinsic carrier density n i ∼ 10 15 cm −3 previously estimated, we obtain L ∼ 30 nm at RT. This value compares well with the expected depth sensitivity of our TARPES experiment (∼10 nm).…”

Section: Surface Photovoltagementioning

confidence: 89%

Non-equilibrium band broadening, gap renormalization and band inversion in black phosphorus

et al. 2021

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Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is crucial. Here, we investigate by time- and angle-resolved photoemission spectroscopy BP in its pristine state and in the presence of Stark splitting, chemically induced by Cs ad-sorption. We show that photo-injected carriers trigger bandgap renormalization, and a concurrent valence band flattening caused by Pauli blocking. In biased samples, photo-excitation leads to a long-lived (ns) surface photovoltage of few hundreds mV that counterbalances the Cs-induced surface band bending. This allows us to disentangle bulk from surface electronic states, and to clarify the mechanism underlying the band inversion observed in bulk samples.

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Section: Surface Photovoltagementioning

confidence: 89%

Non-equilibrium band broadening, gap renormalization and band inversion in black phosphorus

et al. 2021

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“…www.advancedsciencenews.com www.advancedscience.com Table 6. Summary of dielectric constant of different materials with structural in-plane anisotropy obtained from theoretical calculations [31,214,216,218] . Reproduced with permission.…”

Section: Energy Conversionmentioning

confidence: 99%

Recent Advances in 2D Metal Monochalcogenides

Sarkar

Stratakis

2020

Advanced Science

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The family of emerging low‐symmetry and structural in‐plane anisotropic two‐dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IV A –VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in‐plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.

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“…Kutlu et al found that the band structure of the I atom-doped monolayer black phosphorus (BP) system was spin-dependent, where the source of the spin state was mainly the p orbital of the I atom. Moreover, the absorption of low-energy regions was improved to some extent after doping . Wang et al reported that I doping induced a slight band-gap reduction in the 2D metal-phthalocyanine-based pyrazine-linked conjugated covalent organic framework (c-COF ZnPc-pz) system and improved its absorption intensity in the NIR region, which was attributed to the interaction between the electron donor (ZnPc-pz) and acceptor (I 2 ) in ZnPc-pz-I 2 …”

Section: Introductionmentioning

confidence: 99%

Electronic and Near-Infrared-II Optical Properties of I-Doped Monolayer MoTe₂: A First-Principles Study

Zhao

Liu

et al. 2022

ACS Omega

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Near-infrared-II (NIR-II, 1000–1700 nm) fluorescence imaging is widely used for in vivo biological imaging. With the unique electronic structures and capability of band-gap engineering, two-dimensional (2D) materials can be potential candidates for NIR-II imaging. Herein, a theoretical investigation of the electronic structure and optical properties of iodine (I)-doped monolayer MoTe 2 systems with different doping concentrations is carried out through simulations to explore their NIR optical properties. The results suggest that the emergence of impurity levels due to I doping effectively reduces the bandwidth of I-doped monolayer MoTe 2 systems, and the bandwidth decreases with the increase in the I doping concentration. Although the I and Mo atoms possess clear covalent-bonding features according to the charge density difference, impurity levels induced by the strong hybridization between the I 5p and Mo 4d orbitals cross the Fermi level, making the doped systems exhibit metallic behavior. In addition, with the increase in the I doping concentration, the energy required for electron transition from valence bands to impurity levels gradually decreases, which can be linked to the enhancement of the optical absorption in the red-shifted NIR-II region. Meanwhile, with a higher I doping concentration, the emission spectra, which are the product of the absorption spectra and quasi-Fermi distributions for electrons and holes, can be enhanced in the NIR-II window.

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Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms

Cited by 22 publications

References 32 publications

Non-equilibrium band broadening, gap renormalization and band inversion in black phosphorus

Non-equilibrium band broadening, gap renormalization and band inversion in black phosphorus

Recent Advances in 2D Metal Monochalcogenides

Electronic and Near-Infrared-II Optical Properties of I-Doped Monolayer MoTe₂: A First-Principles Study

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Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms

Cited by 22 publications

References 32 publications

Non-equilibrium band broadening, gap renormalization and band inversion in black phosphorus

Non-equilibrium band broadening, gap renormalization and band inversion in black phosphorus

Recent Advances in 2D Metal Monochalcogenides

Electronic and Near-Infrared-II Optical Properties of I-Doped Monolayer MoTe2: A First-Principles Study

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Electronic and Near-Infrared-II Optical Properties of I-Doped Monolayer MoTe₂: A First-Principles Study