Electronic and atomic structure of metastable phases of boron nitride using core-level photoabsorption

Chaiken, A.; Terminello, Louis J.; Wong, Joe; Doll, Gary L.; Taylor, C. A.

doi:10.1063/1.110556

Cited by 42 publications

(18 citation statements)

References 7 publications

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“…This may be due to an over estimation of the strength of the core hole. Up to 30eV above the threshold, the experimental ELNES features of both the B and N K-edges of c-BN are very similar to the equivalent XANES results of Chaiken et al 29 30 Peak A of the B K-edge is sharper and shifted to the lower energy in XANES, by comparison to that in the ELNES measurement. As described by Batson, 31 this may be due to a reduction of the excitonic distortion by the incident swift electron in ELNES.…”

Section: Resultssupporting

confidence: 70%

Cubic boron nitride: Experimental and theoretical energy-loss near-edge structure

et al. 2001

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A comparison between experimental and theoretical electron Energy Loss Near Edge Structure (ELNES) of B and N K-edges in cubic boron nitride is presented. The electron energy loss spectra of cubic boron nitride particles were measured using a scanning transmission electron microscope. The theoretical calculation of the ELNES was performed within the framework of density functional theory including single particle core-hole effects. It is found that experimental and calculated ELNES of both the B and N K-edges in cubic boron nitride show excellent agreement.

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confidence: 70%

Cubic boron nitride: Experimental and theoretical energy-loss near-edge structure

et al. 2001

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“…The anisotropy of the dipole-limit core excitation spectra for q c and q ⊥ c for h-BN is well known from previous EELS 21 , XANES 22,23 , and XRS 24 studies at the q = 0 limit. We extend on this prior work by measuring the q-dependent boron XRS for both q c and q ⊥ c out to q = 9Å −1 , a momentum transfer that is clearly beyond the dipole limit for the B 1s initial state.…”

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confidence: 74%

Exciton spectroscopy of hexagonal boron nitride using nonresonant x-ray Raman scattering

et al. 2008

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We report non-resonant x-ray Raman scattering (XRS) measurements from hexagonal boron nitride for transferred momentum from 2 to 9Å −1 along directions both in and out of the basal plane. A symmetry-based argument, together with real-space full multiple scattering calculations of the projected density of states in the spherical harmonics basis, reveals that a strong pre-edge feature is a dominantly Y10-type Frenkel exciton with no other s-, p-, or d -components. This conclusion is supported by a second, independent calculation of the q-dependent XRS cross-section based on the Bethe-Salpeter equation. The physics of low-energy photoelectrons in solids is a complex, many body problem 1 . All aspects of the electronic structure of the material must be taken into account 2,3 , including the interaction between the photoelectron and the complementary hole 3,4,5,6 . This latter effect allows for similar long-lived bound states in metals (generally called Fermi-edge singularities) 7 and in insulators (called excitons) 8 . As a canonical example of a many body problem in condensed matter physics, core-excitons are a topic of continuing interest 4,5,6 .The present synergy between steadily progressing ab initio theoretical treatments 2,3,9,10 and on-going improvements in instrumentation 11 in studies of nonresonant x-ray Raman scattering (XRS) shows a strong potential for rapid progress on this old problem 5,6 . XRS is the inelastic scattering of hard x-rays from bound electrons, and XRS studies have seen a recent explosion in the number and range of applications 5,6,11,12,13,14,15,16,17 . In comparison with q-resolved electron energy loss spectroscopy (EELS) 18 , XRS is more suited for bulk condensed matter systems 13 due to the large penetration length afforded by the relative high-energy incident and scattered photons. The measured q-dependent XRS provides direct information about multipole contributions to the dynamic structure factor S(q, ω) 5,6,14,15,16 . It can be directly compared with theoretical calculations of S(q, ω) 6,14,15,16 , and can in some cases be inverted to provide an experimental measure of the perturbed projected density of states (l -DOS) 10,19 , which can again be compared to theory.XRS has shown itself to be especially suitable for spectroscopy of the angular characteristics of core excitons at the near edge region. For example, XRS studies 5,6 on LiF and icosahedral B 4 C convincingly demonstrated s-, and p-type excitons at the F and B K-edges, respectively, which can be attributed to atoms located at a center of inversion symmetry of the unit cell with parity a good quantum number for the final states 6 . Here, we demonstrate that for some systems one can learn not only the ∆l selection rule for the exciton but also a full description of its angular characteristics in terms of spherical harmonics, Y lm .We present measurements of the q-dependent XRS of hexagonal boron nitride (h-BN), an anisotropic system with all atoms sitting at positions with reflection symmetry to the basal plane (Figure 1,...

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“…This situation is analogous to the bias-assisted growth of nanocrystalline diamond films that are a mixture of amorphous sp 2 -bonded phase and sp 3 -bonded diamond phase. [11][12][13][14][15] In this work, we study the effect of surface roughness on the structure of thin c-BN films and discuss the mechanism how the substrate surface influences the quantity and preferable orientation of sp 2 -bonded graphitic BN. 4,5 Similarly, turbostratic BN ͑t-BN͒ plays an important role of the nucleation of c-BN, which is evident from the analyses by high-resolution transmission electron microscopy ͑HRTEM͒.…”

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confidence: 99%

Effect of substrate surface on the structure and electronic properties of cubic boron nitride films

Zhou

Sham

Chan

et al. 2006

Journal of Applied Physics

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Articles you may be interested inEffect of indium doping on physical properties of nanocrystallized SnS zinc blend thin films grown by chemical bath deposition J. Renewable Sustainable Energy 4, 011602 (2012); 10.1063/1.3676073 Physical properties of lanthanum monosulfide thin films grown on (100) silicon substrates Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering J. Appl. Phys. 99, 113519 (2006); 10.1063/1.2197287 X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment Appl. Phys. Lett. 85, 5905 (2004); 10.1063/1.1836868Influence of substrate bias on practical adhesion, toughness, and roughness of reactive dc-sputtered zirconium nitride films Cubic boron nitride ͑c-BN͒ films were prepared by mass-selected ion beam deposition ͑MSIBD͒ technique. The effects of substrate surface roughness were investigated by boron and nitrogen k-edge x-ray absorption near-edge structure, x-ray diffraction, and atomic force microscopy. All the films are a mixture of nanocrystalline sp 3 -bonded c-BN and sp 2 -bonded BN phases. The substrate with a rough surface causes a decrease of the c-BN phase content of the film on it. A significant large lattice contraction of the c-BN crystallites in the films, relative to the bulk, is observed. It is also found that the electronic structure of the nanocrystalline c-BN films by MSIBD technique is somewhat different from that of microcrystalline c-BN / h-BN references. We attribute the effect of the nature of the substrate on the morphology and structure of the c-BN films to the orientation of sp 2 -bonded graphitic BN basal plane on the top surface of the films during their growth, and the lattice contraction and energy band structure modification of c-BN films to the large compressive stress, respectively.

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Electronic and atomic structure of metastable phases of boron nitride using core-level photoabsorption

Cited by 42 publications

References 7 publications

Cubic boron nitride: Experimental and theoretical energy-loss near-edge structure

Cubic boron nitride: Experimental and theoretical energy-loss near-edge structure

Exciton spectroscopy of hexagonal boron nitride using nonresonant x-ray Raman scattering

Effect of substrate surface on the structure and electronic properties of cubic boron nitride films

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