2005
DOI: 10.1016/j.saa.2004.04.020
|View full text |Cite
|
Sign up to set email alerts
|

Electronic absorption spectra of symmetric cationic dye in constant electric field

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
4
0

Year Published

2007
2007
2020
2020

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 12 publications
(4 citation statements)
references
References 6 publications
0
4
0
Order By: Relevance
“…The PD concentration was 1 wt.%, which usually ensures efficient photogeneration and transport of charge carriers [1, [5][6][7], and in this case no substantial aggregation of the dyes occurs. The procedure for measuring the optical density (D) and fluorescence intensity (I L ) spectra is described in [2,3]. As the light sources for excitation of luminescence, we used a semiconductor light-emitting diode with l 1 = 418 nm and a semiconductor laser with l 2 = 532 nm.…”
Section: ____________________________________________________________mentioning
confidence: 99%
See 1 more Smart Citation
“…The PD concentration was 1 wt.%, which usually ensures efficient photogeneration and transport of charge carriers [1, [5][6][7], and in this case no substantial aggregation of the dyes occurs. The procedure for measuring the optical density (D) and fluorescence intensity (I L ) spectra is described in [2,3]. As the light sources for excitation of luminescence, we used a semiconductor light-emitting diode with l 1 = 418 nm and a semiconductor laser with l 2 = 532 nm.…”
Section: ____________________________________________________________mentioning
confidence: 99%
“…As the light sources for excitation of luminescence, we used a semiconductor light-emitting diode with l 1 = 418 nm and a semiconductor laser with l 2 = 532 nm. The D and I L values, as in [3], were measured before the external electric field was turned on (D 0 and I L0 ) and after it was turned on (D E and I LE ) with E = 1·10 8 V/m. From these measurements, we calculated the values of dD E = (D E -D 0 )/D 0 and dI E = (I LE -I L0 )/I L0 .…”
Section: ____________________________________________________________mentioning
confidence: 99%
“…However, the proper absorption of these semiconductors had been accomplished within a narrow optical range; therefore, their photosensitivity is insignificant. Increasing the photosensitivity causing an increase of the photoconductivity and other photosensitive characteristics also is achieved by the creation upon the basis of a new molecular semiconductor composites formed due to the photoconductive effect of electron-hole pairs (1)(2)(3)(4), which possess the high separation sensitization of the of the p-n transitions. The impurities, which absorb light in the visible region are the centers of the charge carriers photogeneration, are usually used as a components of such composites.…”
Section: Introductionmentioning
confidence: 99%
“…tween two polarizers for which the angle between the planes of polarization was 90 o . The electric field of potential E = 1⋅10 8 V/m in the FC was created using a corona discharge [10]. The corona device with the sample was placed in a thermostat in order to avoid light depolarization effects in the SnO 2 :In 2 O 3 layers [11].…”
mentioning
confidence: 99%