Electron traps and hysteresis in pentacene-based organic thin-film transistors

Gu, Gong; Kane, M.; Doty, James E.; Firester, Arthur H.

doi:10.1063/1.2146059

Cited by 287 publications

(214 citation statements)

References 8 publications

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“…Irrespective of the OTS treatment, the drain-source current I DS was larger for off-to-on trace than on-to-off trace for all negative values of V G . This behaviour is similar to one observed for the pentacene-based OFETs [38]. It has been argued that the I DS rise in the off-to-on trace is due to the supply of additional holes compensating immobile trapped electrons in the semiconductor whereas the on-to-off I DS is due to the accumulation of holes in the channel in the absence of trapped electrons.…”

Section: Resultssupporting

confidence: 64%

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Chaure

Cammidge

Chambrier

et al. 2011

Science and Technology of Advanced Materials

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Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc 6 ) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO 2 ) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4 × 10 −2 cm 2 V −1 s −1 and 10 6 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to −2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

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Section: Resultssupporting

confidence: 64%

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Chaure

Cammidge

Chambrier

et al. 2011

Science and Technology of Advanced Materials

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“…Characteristic time scales for trapping of charges in the dielectric are in the range of several seconds. 16,26 Therefore, the contribution of photoinduced charges due to trapping should be rather small within the time scale of the output measurement (1 s). Hence, the main contribution is attributed to the photoconductive effect which relies on the fast charge transfer between electron donor and electron acceptor within the lifetime of excitons (850 ps for pentacene).…”

mentioning

confidence: 99%

Photoactive self-assembled monolayers for optically switchable organic thin-film transistors

Salinas

Halik

2013

Applied Physics Letters

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We investigate the photoconductive and photovoltaic effects in organic thin-film transistors with thin hybrid dielectrics composed of aluminum oxide and self-assembled monolayers (SAMs). By using SAM molecules with an electro-optical functionality tuning of the photoinduced charge transfer at the interface of semiconductor and SAM upon illumination with laser light can be achieved. Control of the threshold voltage by the SAM composition enables the optical operation of the transistors without applying a gate voltage and affects the dynamics of photoinduced charge transfer.

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“…25 The high density of charge trap states either in the channel or at the semiconductor/dielectric interface induce high V T and low S in top-contact, pentacene-based OTFTs. 26,27 The intergrain regions with high surface energy in pentacene films are the preferential areas for the CuPc deposition at early stages. 9 By depositing 2 nm CuPc layer, small CuPc grains with electrical conductivity can partially bridge the pentacene grains and fill charge trapping sites in the intergrain regions of pentacene film (Fig.…”

Section: Resultsmentioning

confidence: 99%

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

Liu

Cai

et al. 2014

AIP Advances

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This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

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Electron traps and hysteresis in pentacene-based organic thin-film transistors

Cited by 287 publications

References 8 publications

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Photoactive self-assembled monolayers for optically switchable organic thin-film transistors

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

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