Electron transport in wurtzite InN

El-Ela, F. M. Abou; El-Assy, B M

doi:10.1007/s12043-012-0294-5

Cited by 10 publications

(3 citation statements)

References 20 publications

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“…where h is the reduced Plank's constant, m 0 is the electron effective mass in InN, 20 and L is the thickness if the InN-NPs. The ground state energy (E 0 ) is calculated and found to be E 0 ¼ 13.4 meV.…”

Section: Nm Inn Nanoparticles Embedded In Zno Charge Trapping Layermentioning

confidence: 99%

Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

El‐Atab

Cimen

Alkis

et al. 2014

Applied Physics Letters

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In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al 2 O 3 layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V gate measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V t) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V t shift direction indicates that electrons tunnel from channel to charge storage layer.

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Section: Nm Inn Nanoparticles Embedded In Zno Charge Trapping Layermentioning

confidence: 99%

Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

El‐Atab

Cimen

Alkis

et al. 2014

Applied Physics Letters

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“…Several semi-classical EMC simulations have appeared in the literature, and these have given a wide range of values for the electric field value for the peak of the velocityfield curve, which traditionally signals the onset of carrier transfer to higher-lying conduction band valleys. Values that have appeared in the literature include 25 kV cm −1 [43], 30 kV cm −1 [44][45][46], 35 kV cm −1 [47], and 40 kV cm −1 [48]. Our own experimental studies, using single-particle Raman scattering in the presence of the high electric field [49], suggests that the peak velocity occurs at fields of the order of 75 kV cm −1 .…”

Section: The Monte Carlo Approachmentioning

confidence: 80%

Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions, II. Polar-optical phonons

Ferry

2023

Semicond. Sci. Technol.

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In semi-classical transport, it has become common practice over the past few decades to use ensemble Monte Carlo (EMC) methods for the simulation of transport in semiconductor devices. This method utilizes particles while still addressing the full physics within the device, leaving the computational difficulties to the computer. More recently, the study of quantum mechanical effects within the devices, have become important, and have been addressed in semiconductor devices using non-equilibrium Green's functions (NEGF). In using NEGF, one faces considerable computational difficulties. Recently, a particle approach to NEGF has been suggested and preliminary results presented for non-polar optical phonons in Si, which are very localized scattering centers. Here, the problems with long-range polar-optical phonons are discussed and results of the particle-based simulation are used to examine quantum transport in InN at 300K.

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“…Several semiclassical EMC simulations have appeared in the literature, and these have given a wide range of values for the electric field value for the peak of the velocityfield curve, which traditionally signals the onset of carrier transfer to higher-lying conduction band valleys. Values that have appeared in the literature include 25 kV/cm [43], 30 kV/cm [44,45,46], 35 kV/cm [47], and 40 kV/cm [48]. Our own experimental studies, using single-particle Raman scattering in the presence of the high electric field [49], suggests that the peak velocity occurs at fields of the order of 75 kV/cm.…”

Section: The Monte Carlo Approachmentioning

confidence: 83%

Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions

Ferry

2023

Semicond. Sci. Technol.

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The use of ensemble Monte Carlo (EMC) methods for the simulation of transport in semiconductor devices has become extensive over the past few decades. This method allows for simulation utilizing particles while addressing the full physics within the device, leaving the computational difficulties to the computer. More recently, the study of quantum mechanical effects within the devices, effects which also strongly affect the carrier transport itself, have become important. While particles have continued to be useful in quantum simulations using Wigner functions, interest in analytical solutions based upon the non-equilibrium Green's functions (NEGF) have become of greater interest in device simulation. While NEGF has been adopted by many commercial semiconductor, there remains considerable computational difficulty in this approach. Here, a particle approach to NEGF is discussed, and preliminary results presented illustrating the computational efficiency that remains with the use of particles. This approach adopts the natural basis functions for use in a high electric field and the preliminary results are obtained for quantum transport in Si at 300 K. This approach appears to offer significant advantages for the use of NEGF.

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Electron transport in wurtzite InN

Cited by 10 publications

References 20 publications

Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions, II. Polar-optical phonons

Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions

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