Electron transport in self-switching nano-diodes

Xu, Kun; Wang, Gang; Song, Aimin

doi:10.1007/s10825-006-0048-z

Cited by 9 publications

(6 citation statements)

References 10 publications

(10 reference statements)

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“…With the aim of determining the SSD I-V characteristics, we employed a physically-based device simulator in two-dimensional mode, similar to that reported for 2DEG-based InGaAs SSD and silicon-on-insulator structures. 3,9,17) The electrical properties of 2DEG samples utilized in the simulation were: background doping n = 1 × 10 17 cm −3 , electron mobility μ = 12,000 cm 2 V −1 s −1 , with no impurity scattering. Unless otherwise stated, the dielectric in grooves was considered to be air (ε r = 1) thus inducing a surface charge density of n s = 0.4 × 10 12 cm −2 .…”

Section: Geometry Parameters and Simulation Methodsmentioning

confidence: 99%

Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications

Cortes-Mestizo

Briones

et al. 2015

Jpn. J. Appl. Phys.

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In order to improve the rectification efficiency and current–voltage characteristics of self-switching diodes (SSD) the DC response is analyzed using technology computer aided design (TCAD). It is demonstrated that by varying geometrical parameters of L- and V-shaped SSDs or changing the dielectric permittivity of the trenches, a near zero threshold voltage can obtained, which is essential for energy harvesting applications. The carrier distribution inside the nanochannel is successfully simulated in two-dimensional mode for zero-, reverse-, and forward-bias conditions. This process allows for the evaluation of the effect of the lateral surface-charge on the formation and spatial distribution of the depletion region, in addition to, obtaining information on the physics of the SSD through the propose optimized geometries that were designed for tailoring and matching the desired frequencies of operation. The numerical results showed some insights for the improvement of the rectification efficiency and integration density using parallel SSD arrays.

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Section: Geometry Parameters and Simulation Methodsmentioning

confidence: 99%

Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications

Cortes-Mestizo

Briones

et al. 2015

Jpn. J. Appl. Phys.

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“…With the aim of determining the SSD current-voltage behavior (I-V), we employed a commercial physically based device simulator in two-dimensional mode, similar to that reported for 2DEG-based InGaAs SSD and silicon-oninsulator structures [23,30,31]. In this model, only the 2DEG layer geometry resulted after the lithography process is analyzed.…”

Section: (A)mentioning

confidence: 99%

Semiconductor Surface State Engineering for THz Nanodevices

Cortes-Mestizo¹,

Briones²,

Espinosa-Vega³

et al. 2020

Electromagnetic Materials and Devices

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This chapter is dedicated to study the semiconductor surface states, which combined with nanolithography techniques could result on remarkable properties of advanced nanodevices suitable for terahertz (THz) signal detection or harvesting. The author presents the use of low-dimensional semiconductor heterostructures for the development of the so-called self-switching diodes (SSDs), studying by simulation tool key parameters in detail such as the shape and size of the two-dimensional electron gas system. The impact of the geometry on the working principle of the nanodevice and the effects on current-voltage behavior will be described in order to acquire design guidelines that may improve the performance of the self-switching diodes when applied to low-power square-law rectifiers as well as elements in rectennas by appropriately setting the size of the components.

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“…As a first approach, we use a twodimensional model as that reported for 2DEG-based InGaAs SSD 8,23 and SOI 16 structures. The analysis was performed on InAlAs/InGaAs heterostructures whose layered sequence is described by Song et al 15 Numerical simulations were run (at room-temperature) by introducing a background doping n = 1x10 17 cm −3 , an electron mobility µ = 12000 cm 2 /Vs and the impurity scattering set to off.…”

Section: Simulation and Analysis Detailsmentioning

confidence: 99%

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

et al. 2015

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In this letter, self-switching nanochannels have been proposed as an enabling technology for energy gathering in the terahertz (THz) regime. Such devices combine their diode-like behavior and high-speed of operation in order to generate DC electrical power from high-frequency signals. By using finite-element simulations, we have improved the sensitivity of L-shaped and V-shaped nanochannels based on InAlAs/InGaAs samples. Since those devices combine geometrical effects with their rectifying properties at zero-bias, we have improved their performance by optimizing their shape. Results show nominal sensitivities at zero-bias in the order of 40 V−1 and 20 V−1, attractive values for harvesting applications with square-law rectifiers.

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Electron transport in self-switching nano-diodes

Cited by 9 publications

References 10 publications

Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications

Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications

Semiconductor Surface State Engineering for THz Nanodevices

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

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