Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

Blagoev, B.; Dimitrov, Dimitre; Mehandzhiev, V.; Kovacheva, D.; Terziyska, P.; Pavlič, Janez; Lovchinov, K; Mateev, E.; Leclercq, Jean‐Louis; Sveshtarov, P.

doi:10.1088/1742-6596/700/1/012040

Cited by 17 publications

(9 citation statements)

References 15 publications

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“…The final thickness of PAA templates was measured using optical microscopy technique (figure 2). [7] should be about 2.3 %, where the m and n are the numbers of TMA and DEZ cycles and A and B are the growth rates of Al 2 O 3 and ZnO, respectively. It should be noted that in thinner films (with 2 and 4 repetition of full cycles) the growth rate is supposed to be lower due to the interphase interactions and surface initialization for conformal deposition.…”

Section: Morphology Of Porous Anodic Alumina Templatesmentioning

confidence: 99%

Atomic layer deposition of ZnO:Al on PAA substrates

Blagoev

Vlakhov

Videkov

et al. 2016

J. Phys.: Conf. Ser.

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Abstract. In this work the ZnO:Al films of different thickness are grown on the Porous Anodic Alumina (PAA) and p-Si (100) substrates by Atomic Layer Deposition. The ZnO:Al films thicknesses are chosen appropriately in order to obtain complete filled pores as well as pores with a thin covering on the surface. The obtained structures are investigated with spectroscopic ellipsometry and Scanning Electron Microscopy (SEM) techniques.

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Section: Morphology Of Porous Anodic Alumina Templatesmentioning

confidence: 99%

Atomic layer deposition of ZnO:Al on PAA substrates

Blagoev

Vlakhov

Videkov

et al. 2016

J. Phys.: Conf. Ser.

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“…Maeng et al [ 13 ] fabricated AZO by using atomic layer deposition and various Al doping concentrations from 1 to 12 at %, showing that the transmittance increases with an increase in the Al concentration. Blagoev et al [ 14 ] also prepared AZO films with different Al concentrations by atomic layer deposition. They found that the resistivity of the films decreased with an increase in the Al concentration, reaching a minimum of 3.3 × 10 −3 Ω·cm at about 1.1% Al 2 O 3 and then increased slowly.…”

Section: Introductionmentioning

confidence: 99%

Effects of Al-Impurity Type on Formation Energy, Crystal Structure, Electronic Structure, and Optical Properties of ZnO by Using Density Functional Theory and the Hubbard-U Method

Chen

Zhu

2016

Materials

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We systematically investigated the effects of Al-impurity type on the formation energy, crystal structure, charge density, electronic structure, and optical properties of ZnO by using density functional theory and the Hubbard-U method. Al-related defects, such as those caused by the substitution of Zn and O atoms by Al atoms (Als(Zn) and Als(O), respectively) and the presence of an interstitial Al atom at the center of a tetrahedron (Ali(tet)) or an octahedron (Ali(oct)), and various Al concentrations were evaluated. The calculated formation energy follows the order Ef(Als(Zn)) < Ef(Ali(tet)) < Ef(Ali(oct)) < Ef(Als(O)). Electronic structure analysis showed that the Als(Zn), Als(O), Ali(tet), and Ali(oct) models follow n-type conduction, and the optical band gaps are higher than that of pure ZnO. The calculated carrier concentrations of the Als(O) and Ali(tet)/Ali(oct) models are higher than that of the Als(Zn) model. However, according to the curvature of the band structure, the occurrence of interstitial Al atoms or the substitution of O atoms by Al atoms results in a high effective mass, possibly reducing the carrier mobility. The average transmittance levels in the visible light and ultraviolet (UV) regions of the Als(Zn) model are higher than those of pure ZnO. However, the presence of an interstitial Al atom within the ZnO crystal reduces transmittance in the visible light region; Als(O) substantially reduces the transmittance in the visible light and UV regions. In addition, the properties of ZnO doped with various Als(Zn) concentrations were analyzed.

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“…Pure nitrogen was used as a carrier and purge gas at an average flow of 600 sccm. The Al-doping concentration in ZnO was adjusted by varying the number of DEZ/H 2 O and TMA/H 2 O cycles in a standard procedure for ALD processes [ 29 ] as follows: after 24 cycles of DEZ/H 2 O, a cycle of TMA/H 2 O was applied consisting of one so-called ‘supercycle’. The pulse durations for precursors reactions were the same of 200 ms for DEZ, TMA, and H 2 O, whereas the purging time after each precursor reaction was 2 s. The substrates were fixed with heat-resistant tape (specified temperature range −75 to +260 °C) in the ALD reaction chamber.…”

Section: Methodsmentioning

confidence: 99%

ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices

et al. 2021

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In this work, highly conductive Al-doped ZnO (AZO) films are deposited on transparent and flexible muscovite mica substrates by using the atomic layer deposition (ALD) technique. AZO-mica structures possess high optical transmittance at visible and near-infrared spectral range and retain low electric resistivity, even after continuous bending of up to 800 cycles. Structure performances after bending tests have been supported by atomic force microscopy (AFM) analysis. Based on performed optical and electrical characterizations AZO films on mica are implemented as transparent conductive electrodes in flexible polymer dispersed liquid crystal (PDLC) devices. The measured electro-optical characteristics and response time of the proposed devices reveal the higher potential of AZO-mica for future ITO-free flexible optoelectronic applications.

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Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

Cited by 17 publications

References 15 publications

Atomic layer deposition of ZnO:Al on PAA substrates

Atomic layer deposition of ZnO:Al on PAA substrates

Effects of Al-Impurity Type on Formation Energy, Crystal Structure, Electronic Structure, and Optical Properties of ZnO by Using Density Functional Theory and the Hubbard-U Method

ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices

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