Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br–Si(100)-(2×1)

Trenhaile, B. R.; Antonov, V. N.; Xu, Gang; Nakayama, Koji S.; Weaver, J. H.

doi:10.1016/j.susc.2005.03.053

Cited by 32 publications

(31 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Trail et al [12] and Mizielinski et al [13] found that non-adiabatic dissipation of chemical energy leads to Boltzmann-like energy distributions of hot electrons above the Fermi level based on the first-principles theory. Several experiments suggest that the electronic excitation causes atomic/molecular processes such as adsorption/desorption, or molecular dissociation [14,15]. Nienhauss et al [16,17] detected electrons of kinetic energy greater than 0.5 eV injected into their diode when hydrogen or oxygen atoms adsorbed on silver thin film Schottky diodes.…”

Section: Introductionmentioning

confidence: 99%

The genesis and importance of oxide–metal interface controlled heterogeneous catalysis; the catalytic nanodiode

et al. 2007

View full text Add to dashboard Cite

Much of the research by KonradHayek's group is focused on the influence of oxide-metal interfaces in heterogeneous catalysis. In this paper, we show that electronic excitations at the metal surface induced by exothermic catalytic reactions lead to the generation of energetic (hot) electron flows. We detected the flow of hot electrons during oxidation of carbon monoxide using Pt/ TiO 2 Schottky diodes. The thickness of the Pt film used as the catalyst was 5 nm, less than the electron mean free path, resulting in the ballistic transport of hot electrons through the metal. The electron flow was detected as a chemicurrent if the excess electron kinetic energy generated by the exothermic reaction was larger than the effective Schottky barrier formed at the metalsemiconductor interface. We found that heat generated by the reaction caused a negligible increase of temperature in our experimental range, suggesting that this thermal effect is not responsible for the generation of hot electron flow. We tested the stability and reversibility of chemicurrent generated during CO oxidation at 413$573 K. The activation energy calculated from the measurement of chemicurrent is quite close to that of the turnover rate of chemical reaction, which indicates that the generation mechanism of hot electrons is closely correlated with the chemical reaction. This correlation suggests that hot electron flow could be a new tool to probe the role of oxide-metal interfaces in heterogeneous catalysis.

show abstract

Section: Introductionmentioning

confidence: 99%

The genesis and importance of oxide–metal interface controlled heterogeneous catalysis; the catalytic nanodiode

et al. 2007

View full text Add to dashboard Cite

show abstract

“…6, 7, and 21͒ because Cl atoms on neighboring dimers preclude the escape of the Si bystander. However, Trenhaile et al 22,23 demonstrated that bare dimers ͑BDs͒ can be generated on a saturated surface by phonon-activated electron-stimulated desorption ͑PAESD͒ of atomic Cl. Once this occurs, the surface will etch/roughen through the conventional reactions, as shown in Fig.…”

mentioning

confidence: 99%

Atomic processes during Cl supersaturation etching ofSi(100)−(2×1)

et al. 2009

View full text Add to dashboard Cite

Supersaturation etching starts with Cl insertion into Si-Si bonds of Si͑100͒ and leads to the desorption of SiCl 2 pairs. During etching, insertion occurs through a Cl 2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.

show abstract

“…The mechanism by which Cl inserts is particularly intriguing because it requires a Si dangling bond to activate Cl 2 dissociation, with one atom tying up the dangling bond and the other inserting into a Si-Si dimer bond or backbond with 10% probability. The dangling bond sites that mediate insertion are produced by phonon-activated electron-stimulated desorption (PAESD) of Cl [7,8], and the PAESD rate limits the uptake and subsequent etching reactions. Studies of the dependence of etch rate on time, flux, and temperature reveal the kinetics and establish the insertion mechanism.…”

mentioning

confidence: 99%

Cl Insertion onSi(100)−(2×1): Etching Under Conditions of Supersaturation

2007

View full text Add to dashboard Cite

We use scanning tunneling microscopy to show that Cl2 dosing of Cl-saturated Si(100)-(2x1) surfaces at elevated temperature leads to uptake beyond "saturation" and allows access to a new etching pathway. This process involves Cl insertion in Si-Si dimer bonds or backbonds, diffusion of the inserted Cl, and ultimately desorption of SiCl2. Investigations into the etch kinetics reveal that insertion occurs via a novel form of Cl2 dissociative chemisorption that is mediated by dangling bond sites. Upon dissociation, one Cl atom adsorbs at the dangling bond while the other can insert.

show abstract

Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br–Si(100)-(2×1)

Cited by 32 publications

References 25 publications

The genesis and importance of oxide–metal interface controlled heterogeneous catalysis; the catalytic nanodiode

The genesis and importance of oxide–metal interface controlled heterogeneous catalysis; the catalytic nanodiode

Atomic processes during Cl supersaturation etching ofSi(100)−(2×1)

Cl Insertion onSi(100)−(2×1): Etching Under Conditions of Supersaturation

Contact Info

Product

Resources

About