1998
DOI: 10.1016/s0038-1098(97)10180-6
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Electron spin resonance study on high energy heavy ion irradiated conducting carbon films

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Cited by 8 publications
(3 citation statements)
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“…Although the VRH model by Mott should be applicable in a low temperature regime below 100 K, it has been pointed out by Mostefa et al [52] that the expression for the density of states at the Fermi level can be modified taking into account the strength of Coulomb interactions enabling VRH theory to be applied even at temperatures as high as 300 K and above. If the energy gap is almost zero or if a low defect density of states is present, then the semiconductor shows an activated conduction mechanism or a combination of extended state plus hopping [42,53,54]. The last case is more extended-state-like with little effect of hopping depending on the amount of defect states.…”
Section: Variable Range Hopping and Conductivity Of Ordered Carbon Lamentioning
confidence: 99%
“…Although the VRH model by Mott should be applicable in a low temperature regime below 100 K, it has been pointed out by Mostefa et al [52] that the expression for the density of states at the Fermi level can be modified taking into account the strength of Coulomb interactions enabling VRH theory to be applied even at temperatures as high as 300 K and above. If the energy gap is almost zero or if a low defect density of states is present, then the semiconductor shows an activated conduction mechanism or a combination of extended state plus hopping [42,53,54]. The last case is more extended-state-like with little effect of hopping depending on the amount of defect states.…”
Section: Variable Range Hopping and Conductivity Of Ordered Carbon Lamentioning
confidence: 99%
“…By comparing the measured conductivity values with that found in the a-C systems literature [15,28], we can expect the PPFA nanowires to be composed of sp 2 rich carbon. In addition, electron energy loss spectroscopy (EELS) confirmed the PPFA nanowires to be sp 2 carbon rich structure with almost negligible sp 3 carbon, a structure observed by other researchers in similar nanoporous carbon systems [29].…”
Section: Electrical Characterizationmentioning
confidence: 77%
“…In general, the electronic structure of the materials can be modified by the introduction of defect levels in the band gap through appropriate treatments, such as ion implantation, plasma bombardment, and thermal annealing [14,15]. The treatment process can induce different kinds of trapping centres in the band tail regions.…”
Section: Introductionmentioning
confidence: 99%