Electron spin resonance spectroscopy investigation of ion beam sputtered HfO 2 and SiO 2 thin films

Abstract

In this work we use electron spin resonance (ESR) spectroscopy to investigate defects in dual ion beam sputtered HfO 2 and SiO 2 films. "As-grown" SiO 2 films exhibit an ESR feature consistent with an E' center associated with an oxygen vacancy previously reported. A similar feature with axial symmetry is seen in HfO 2 films. The defect giving rise to the HfO 2 ESR feature is distributed throughout the film. In addition, post process annealing of HfO 2 and SiO 2 films greatly reduces these defects.