Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique

Fehér, G.

doi:10.1103/physrev.114.1219

Cited by 1,002 publications

(594 citation statements)

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“…For natural silicon (nuclear spin fraction f = 0.0467) our calculated root mean square line-width is equal to 0.89 G. On the other hand, a simple spin resonance scan leads to 2.5 G/2 √ 2 ln 2 = 1.06 G [33]. Therefore the simple model employed here is able to explain 84% of the experimental hyperfine line-width.…”

Section: Effective Mass Model For a Phosphorus Impurity In Siliconmentioning

confidence: 64%

“…Here n = (0.029eV /E i ) 1/2 with E i being the ionization energy of the impurity (E i = 0.044 eV for the phosphorus impurity, hence n = 0.81 in our case), a Si = 5.43Å the lattice parameter for Si, a = 25.09Å and b = 14.43Å characteristic lengths for Si hydrogenic impurities [33]. Moreover, we will use experimentally measured values for the charge density on each Si lattice site |u(R i )| 2 = η ≈ 186 [32].…”

Section: Effective Mass Model For a Phosphorus Impurity In Siliconmentioning

confidence: 99%

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Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations

Sousa

2009

Topics in Applied Physics

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Section: Effective Mass Model For a Phosphorus Impurity In Siliconmentioning

confidence: 64%

Section: Effective Mass Model For a Phosphorus Impurity In Siliconmentioning

confidence: 99%

Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations

Sousa

2009

Topics in Applied Physics

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“…The theoretical maximum of T 2 , in the complete absence of the unwanted interactions with other paramagnetic impurities, is the relaxation time T 1 . Indeed, for the case of Phosphorus defects in isotopically ultra-pure 28 Si, the phase relaxation time of the loosely bound Phosphorus electrons can be as long as T 2 > .1 msec with T 1 > 1 hour [19]. There T 2 is limited by Hyperfine interactions with residual 29 Si nuceli [20].…”

Section: Group V Endohedralsmentioning

confidence: 99%

Quantum-cellular-automata quantum computing with endohedral fullerenes

2003

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We present a scheme to perform universal quantum computation using global addressing techniques as applied to a physical system of endohedrally doped fullerenes. The system consists of an ABAB linear array of Group V endohedrally doped fullerenes. Each molecule spin site consists of a nuclear spin coupled via a Hyperfine interaction to an electron spin. The electron spin of each molecule is in a quartet ground state S = 3/2. Neighboring molecular electron spins are coupled via a magnetic dipole interaction. We find that an all-electron construction of a quantum cellular automata is frustrated due to the degeneracy of the electronic transitions. However, we can construct a quantum cellular automata quantum computing architecture using these molecules by encoding the quantum information on the nuclear spins while using the electron spins as a local bus. We deduce the NMR and ESR pulses required to execute the basic cellular automata operation and obtain a rough figure of merit for the the number of gate operations per decoherence time. We find that this figure of merit compares well with other physical quantum computer proposals. We argue that the proposed architecture meets well the first four DiVincenzo criteria and we outline various routes towards meeting the fifth criteria: qubit readout.

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“…The two features indicated by dashed lines have equal amplitudes, are separated by 4.2 mT and correspond to a central g-value of 1.9985. This is the characteristic ESR hyperfine signature of the 31 P donor electron in silicon [24,25]. The broader peak at B 0 = 347.1 mT is an unresolved superposition of signal contributions from P b0 centers that have different orientations with respect to the Si (100) surface, which results in resonances at g = 2.0039 and g = 2.0081 for the orientation of the sample with respect to the magnetic field orientation indicated in Fig.…”

mentioning

confidence: 99%

Electrical detection of coherent 31P spin quantum states

et al. 2006

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In recent years, a variety of solid-state qubits has been realized, including quantum dots [1,2], superconducting tunnel junctions [3,4] and point defects [5,6]. Due to its potential compatibility with existing microelectronics, the proposal by Kane [7,8] based on phosphorus donors in Si has also been pursued intensively [9,10,11]. A key issue of this concept is the readout of the 31 P quantum state. While electrical measurements of magnetic resonance have been performed on single spins [12,13], the statistical nature of these experiments based on random telegraph noise measurements has impeded the readout of single spin states. In this letter, we demonstrate the measurement of the spin state of 31 P donor electrons in silicon and the observation of Rabi flops by purely electric means, accomplished by coherent manipulation of spin-dependent charge carrier recombination between the 31 P donor and paramagnetic localized states at the Si/SiO2 interface via pulsed electrically detected magnetic resonance. The electron spin information is shown to be coupled through the hyperfine interaction with the 31 P nucleus, which demonstrates the feasibility of a recombinationbased readout of nuclear spins.Since the detection of single charges has become technically straight forward, it is widely believed [7,8,10,11,12] that the realization of spin-to-charge transfer is the key prerequisite for a successful implementation of single spin phosphorus ( 31 P) readout devices, capable of determining the actual spin state (spin up | ↑ or spin down | ↓ ). Different approaches to the electrical spin readout of 31 P-donor electron spins have been proposed based on spin-dependent transitions between neighboring 31 P atoms [7,8,10,11]. Since the states involved are energetically degenerate, these spin-to-charge transfer schemes are rather difficult to realize. Alternatively, spin-dependent transitions involving dissimilar paramagnetic states might be easier to detect as proposed by Boehme and Lips [14]. Spin-dependent charge carrier transport and recombination are known at least since 1966 [15], when Schmidt and Solomon already observed spin-dependent recombination involving 31 P donors in silicon. However, it was not demonstrated until 2003 [16] that the much more sensitive electrical detection of spins via resonant changes of recombination processes is also able to reflect coherent spin motion, which is necessary for a readout of the spin quantum state as opposed to a mere detection of the presence of spins. Figure 1(a) illustrates the readout scheme based on spin-dependent recombination demonstrated in this paper. In order to probe 31 P donor electron spins, spindependent excess charge carrier recombination through so-called P b0 centers is used. P b0 centers are trivalent Si atoms at the interface between crystalline silicon (c-Si) and silicon dioxide (SiO 2 ) that introduce localized, paramagnetic states in the Si band gap and dominate electron trapping and recombination at the interface [17,18]. If a neutral P b0 center is locate...

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Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique

Cited by 1,002 publications

References 42 publications

Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations

Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations

Quantum-cellular-automata quantum computing with endohedral fullerenes

Electrical detection of coherent 31P spin quantum states

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