“…[ 58–65 ] In particular, organic molecules with a strong permanent dipole moment can change the band alignment at the interface and, thus, the charge carrier selectivity by modifying the concentration of charge carriers in the vicinity of the electrode contact. In the past dipole materials such as 8‐hydroxyquinolinolato‐lithium (Liq), [ 66,67 ] polyethyleneoxide (PEO), [ 68 ] poly[(9,9‐bis(30‐( N , N ‐diethylamino)propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene)] (PFN), [ 69 ] perylene diimide (PDIN), [ 70 ] buckminsterfullerene (C 60 ) doped by tetrabutylammoniumiodide (TBAI), [ 71 ] poly[4,8‐bis(2‐ethylhexyloxyl)benzo[1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl‐alt‐ethylhexyl‐3‐fluorothieno[3,4‐b]thiophene‐2‐carboxylate‐4,6‐diyl] (PTB7)‐based conjugated polyelectrolytes, PTB7‐NBr and PTB7‐NSO3, [ 72 ] quinhydrone (QHY), [ 73 ] and branched polyethylenimine (b‐PEI) [ 41 ] were applied as ultra‐thin interfacial layers to form electron‐selective contacts. In addition, the amino acid l ‐histidine was investigated as an electron‐selective contact, enabling promising contact properties.…”
Interfacial layers consisting of organic molecules with a permanent dipole moment exhibit enhanced charge carrier selectivity when applied as electron‐selective contacts in crystalline silicon (c‐Si) heterojunction solar cells. It is found that thermal annealing has a detrimental effect on the charge carrier selectivity of dipole materials based on the amino acid l‐histidine mixed with a fluorosurfactant. Although, the implied open‐circuit voltage (iVoc) increases with annealing, the Voc decreases significantly which is accompanied by a decrease in the built‐in voltage (Vbi) and increase in the specific contact resistivity (ρc). Based on numerical device simulations, it is concluded that the tunneling of electrons through the dipole layer becomes less effective with increasing annealing temperature due to the decomposition of the dipole materials. The decomposition leads to a more “resistive” interfacial layer and to a gradient in the electron quasi‐Fermi potential and, thus, a decrease in Voc. Furthermore, storage under ambient air at room temperature degraded the electron‐selective contacts substantially, limiting the potential of the dipole material for the application in silicon organic heterojunction solar cells.
“…[ 58–65 ] In particular, organic molecules with a strong permanent dipole moment can change the band alignment at the interface and, thus, the charge carrier selectivity by modifying the concentration of charge carriers in the vicinity of the electrode contact. In the past dipole materials such as 8‐hydroxyquinolinolato‐lithium (Liq), [ 66,67 ] polyethyleneoxide (PEO), [ 68 ] poly[(9,9‐bis(30‐( N , N ‐diethylamino)propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene)] (PFN), [ 69 ] perylene diimide (PDIN), [ 70 ] buckminsterfullerene (C 60 ) doped by tetrabutylammoniumiodide (TBAI), [ 71 ] poly[4,8‐bis(2‐ethylhexyloxyl)benzo[1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl‐alt‐ethylhexyl‐3‐fluorothieno[3,4‐b]thiophene‐2‐carboxylate‐4,6‐diyl] (PTB7)‐based conjugated polyelectrolytes, PTB7‐NBr and PTB7‐NSO3, [ 72 ] quinhydrone (QHY), [ 73 ] and branched polyethylenimine (b‐PEI) [ 41 ] were applied as ultra‐thin interfacial layers to form electron‐selective contacts. In addition, the amino acid l ‐histidine was investigated as an electron‐selective contact, enabling promising contact properties.…”
Interfacial layers consisting of organic molecules with a permanent dipole moment exhibit enhanced charge carrier selectivity when applied as electron‐selective contacts in crystalline silicon (c‐Si) heterojunction solar cells. It is found that thermal annealing has a detrimental effect on the charge carrier selectivity of dipole materials based on the amino acid l‐histidine mixed with a fluorosurfactant. Although, the implied open‐circuit voltage (iVoc) increases with annealing, the Voc decreases significantly which is accompanied by a decrease in the built‐in voltage (Vbi) and increase in the specific contact resistivity (ρc). Based on numerical device simulations, it is concluded that the tunneling of electrons through the dipole layer becomes less effective with increasing annealing temperature due to the decomposition of the dipole materials. The decomposition leads to a more “resistive” interfacial layer and to a gradient in the electron quasi‐Fermi potential and, thus, a decrease in Voc. Furthermore, storage under ambient air at room temperature degraded the electron‐selective contacts substantially, limiting the potential of the dipole material for the application in silicon organic heterojunction solar cells.
“…After 180-min passivation in QHY/MeOH (Figure 7c), the scan shows highly severe molecular aggregations compared with that of pure BQ (Figure 7e). The QHY/MeOH passivation is known to induce positive surface charge on the Si surface by the strong dipole moment of the SQ molecule producing Si surface band-bending (field effect passivation) [24]; therefore, the molecular aggregation after excess dipping time weakened the molecular dipole moment [12]. This is because, although dipole moment is a vector quantity produced by charge asymmetry within molecules, random stacking of molecules would encourage π-π interaction between stacked molecules, thereby reducing charge asymmetry and consequently producing a weaker dipole moment within the molecular layer [27].…”
Section: Resultsmentioning
confidence: 99%
“…al. successfully demonstrated that QHY/MeOH passivation is highly effective to fabricate cost-effective and low-temperature processable dopant-free Si/organic heterojunction solar cells [12].…”
In this report, we present a study of the quinhydrone/methanol (QHY/MeOH) organic passivation technique for a silicon (Si) surface. The roles of p-benzoquinone (BQ) and hydroquinone (HQ), which make up QHY, in controlling the uniformity and coverage of the passivation layer as well as the minority carrier lifetime (τeff) of Si were investigated. The uniformity and coverage of the passivation layer after treatment with diverse mixture ratios of BQ and HQ in MeOH were studied with two different atomic force microscope (AFM) techniques, namely tunneling mode (TUNA) and high-resolution tapping mode AFM (HR-AFM). In addition, the τeff and surface potential voltages (SPV) of passivated surfaces were measured to clarify the relationship between the morphologies of the passivation layers and degrees of surface band bending. The molecular interactions between BQ and HQ in MeOH were also analyzed using Fourier-transform infrared spectroscopy (FT-IR). In our study, we successfully demonstrated the role of each molecule for effective Si surface passivation with BQ working as a passivation agent and HQ contributing as a proton (H+) donator to BQ for accelerating the passivation rate. However, our study also clearly revealed that HQ could also hinder the formation of a conformal passivation layer, which raises an issue for passivation over complex surface geometry, especially a nanostructured surface.
“…Metal fluorides (e.g., lithium fluoride and magnesium fluoride), metal carbonates (e.g., cesium carbonate, potassium carbonate, and calcium carbonate), low work function metals (e.g., calcium and magnesium), and organic polymers (e.g., quinhydrone, poly(ethylene oxide), C 60 pyrrolidine tris‐acid, and phenyl‐C 61 ‐butyric acid methyl ester) have been proven to be effective ETLs. [ 22–29 ] The other approach to realize effective electron‐selective contact is to passivate the surface state density at c‐Si/metal interface. For example, some metal oxides (e.g., titanium oxide, magnesium oxide, and tantalum oxide) and metal nitrides (e.g., titanium nitride, titanium oxynitride, and tantalum nitride) can form effective electron‐selective contacts with n‐type c‐Si even if they do not have low work function.…”
Section: Introductionmentioning
confidence: 99%
“…Metal fluorides (e.g., lithium fluoride and magnesium fluoride), metal carbonates (e.g., cesium carbonate, potassium carbonate, and calcium carbonate), low work function metals (e.g., calcium and magnesium), and organic polymers (e.g., quinhydrone, poly(ethylene oxide), C 60 pyrrolidine tris-acid, and phenyl-C 61 -butyric acid methyl ester) have been proven to be effective ETLs. [22][23][24][25][26][27][28][29] The other approach to realize effective electron-selective contact is to passivate the surface state density…”
Crystalline silicon (c‐Si) solar cells with carrier‐selective passivating contacts have been prosperously developed over the past few years, showing fundamental advantages, e.g., simpler configurations and higher potential efficiencies, compared with conventional c‐Si solar cells using highly doped emitters. Herein, solution‐processed cesium halides (CsX, X represents F, Cl, Br, I) are investigated as electron‐selective contacts for c‐Si solar cells, enabling lowest contact resistivity down to about 1 mΩ cm2 for slightly doped n‐type c‐Si/CsF/Al contact. After inserting a thin intrinsic amorphous silicon (a‐Si:H(i)) passivating layer, the contact resistivity can still be kept in a low value, about 10 mΩ cm2. With full area rear‐side a‐Si:H(i)/CsF/Al electron‐selective passivating contacts, record power conversion efficiencies of about 21.8% are finally demonstrated for n‐type c‐Si solar cells, showing a simple approach to realize high‐efficiency c‐Si solar cells.
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